KEXIN 2SK3050

Transistors
IC
SMD Type
Small Switching
2SK3050
TO-252
+0.15
6.50-0.15
+0.2
5.30-0.2
Low on-resistance.
Unit: mm
+0.1
2.30-0.1
+0.15
1.50-0.15
Features
+0.8
0.50-0.7
0.127
max
Easily designed drive circuits.
Easy to use in parallel.
2.3
+0.1
0.60-0.1
3.80
+0.15
5.55-0.15
+0.1
0.80-0.1
+0.25
2.65-0.1
30V.
+0.28
1.50-0.1
Gate-source voltage (VGSS) guaranteed to be
+0.2
9.70-0.2
Wide SOA (safe operating area).
+0.15
0.50-0.15
Fast switching speed.
1. Gate
+0.15
4.60-0.15
Silicon N-channel MOSFET
2. Drain
3. Source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain to Source Voltage
VDSS
600
V
Gate to Source Voltage
VGSS
30
V
ID
2
A
Drain Current (pulse) *
IDP
6
A
Body to drain diode reverse drain current
IDR
2
A
Body to drain diode reverse drain current(pulse) *
IDRP
6
A
W
Drain Current(DC)
Total power dissipation (Tc=25 )
PD
20
Channel Temperature
Tch
150
Storage temperature
Tstg
-55 to +150
* PW
10ìs,Dduty cycle 1%.
Electrical Characteristics Ta = 25
Parameter
Gate to source leak current
Drain to source breakdown voltage
Symbol
IGSS
Testconditons
Typ
VGS= 30V, VDS=0V
V(BR)DSS ID=1mA, VGS=0V
Zero gate voltage drain current
IDSS
VDS=600V, VGS=0V
Gate threshold voltage
VGSth
VDS=10V, ID=1mA
Static Drain to source on stateresistance
Min
100
600
|yfs|
ID=1A, VDS=10V
2.0
Input capacitance
Ciss
Output capacitance
Reverse transfer capacitance
Turn-on delay time
4.0
4.4
nA
A
V
5.5
1.0
S
VDS=10V
280
pF
Coss
VGS=0V
48
pF
Crss
f=1MHz
16
pF
td(on)
VGS=10V
12
ns
tr
RL=300
17
ns
td(off)
RG=10
29
ns
tf
ID=1A, VDD=300V
105
ns
Reverse recovery time
trr
IDR=2A, VGS=0V
460
ns
Reverse recovery charge
Qrr
di/dt=100A/
2.0
Rise time
Turn-off delay time
Fall time
s
0.5
Unit
V
100
RDS(on) ID=1A, VGS=10V
Forward transfer admittance
Max
C
www.kexin.com.cn
1