Product specification MMBT2907A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 ● Complementary NPN Type Available(MMBT2222A) 1 0.55 ● Epitaxial Planar Die Construction +0.1 1.3-0.1 +0.1 2.4-0.1 ■ Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -5 V Collector Current - Continuous IC -600 mA Total Device Dissipation PD 250 mW RθJA 500 ℃/ W TJ, Tstg -55 to +150 ℃ Thermal Resistance, Junction to Ambient Operating and Storage Junction Temperature Range http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Product specification MMBT2907A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditions Min Max Unit Collector-Base Breakdown Voltage V(BR)CBO IC = -10 μA, IE = 0 -60 V Collector-Emitter Breakdown Voltage* V(BR)CEO IC = -10 mA, IB = 0 -60 V Emitter-Base Breakdown Voltage V(BR)EBO IE = -10μA, IC = 0 -5 V Collector Cutoff Current ICBO VCB = -50 V, IE = 0 -20 nA Collector Cutoff Current ICEX VCE = -30 V,VBE(off) =-0.5V -50 nA VCE=-10V,IC=-0.1mA DC Current Gain hFE Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage * VCE(sat) VBE(sat) Current Gain - Bandwidth Product fT Delay Time td Rise Time tr Storage Time ts Fall Time tf 75 VCE=-10V,IC=-1mA 100 VCE=-10V,IC=-10mA 100 VCE=-10V,IC=-150mA 100 VCE=-10V,IC=-500mA 50 300 IC = -150 mA, IB = -15 mA -0.4 V IC = -500 mA, IB = -50 mA -1.6 V IC = -150 mA, IB = -15 mA -1.3 V IC = -500 mA, IB = -50 mA -2.6 V VCE=-20V,IC=-50mA,f=100MHz 200 VCC = -30 V, IC = -150 mA,IB1 = -15 mA VCC = -6.0 V, IC = -150 mA,IB1 = IB2 = -15 mA MHz 10 ns 40 ns 80 ns 30 ns * Pulse test: Pulse width ≤ 300 μs, duty cycle ≤ 2.0% ■ Marking Marking 2F http://www.twtysemi.com [email protected] 4008-318-123 2 of 2