Product specification MMBT3904T SOT-523 Unit: mm +0.1 1.6-0.1 ■ Features +0.1 1.0-0.1 +0.05 0.2-0.05 +0.01 0.1-0.01 1 +0.15 1.6-0.15 ● Complementary PNP Type Available(MMBT3906T) +0.05 0.8-0.05 2 0.55 ● Ultra-Small Surface Mount Package 0.35 3 +0.25 0.3-0.05 +0.1 -0.1 0.5 +0.1 0.8-0.1 +0.05 0.75-0.05 1. Base 2. Emitter 3. Collecter ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Unit Collector - Base Voltage Parameter VCBO 60 V Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6 V Collector Current - Continuous IC 0.2 A Collector Power Dissipation PD 150 mW RθJA 833 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature Tstg -55 to 150 ℃ Thermal Resistance, Junction to Ambient (Note 1) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditons Min Typ Max Unit Collecto- base breakdown voltage VCBO Ic= 10 μA， IE=0 60 V Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB=0 40 V Emitter - base breakdown voltage VEBO IE= 10μA， IC=0 6 Collector cut-off current IcBO VCB= 60 V , IE=0 0.1 μA Collector cut-off current IcEO VCE= 30 V , VBE(off)=3V 50 nA Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 μA DC current gain hFE VCE= 1V, IC= 10mA 100 VCE= 1V, IC= 50mA 60 V 300 Collector-emitter saturation voltage VCE(sat) IC=50 mA, IB= 5mA 0.4 V Base - emitter saturation voltage VBE(sat) IC= 50 mA, IB= 5mA 0.95 V Delay time td VCC=3.0V,VBE=-0.5V 35 Rise time tr IC=10mA,IB1=-IB2=1.0mA 35 Storage time ts VCC=3.0V,IC=10mA 200 Fall time tf IB1=-IB2=1.0mA 50 Transition frequency fT VCE= 20V, IC= 10mA,f=100MHz 300 ns ns MHz ■ Marking Marking 1N http://www.twtysemi.com [email protected] 4008-318-123 1 of 1