WILLAS FM120-M+ MMBD4448TWTHRU SOT-363 Plastic-Encapsulate Diode FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H SOT-363 Switching profile surface mounted application in order to • LowDiode optimize board space. FEATURES • Low power loss, high efficiency. z Fast Switching Speed current capability, low forward voltage drop. • High High surge capability. • z Ultra-Small Surface Mount Package • Guardring for overvoltage protection. z For General Purpose Switching Applications • Ultra high-speed switching. z High Conductance epitaxialPower planar Dissipation chip, metal silicon junction. • Silicon Lead-free parts meet environmental standards of • package is available z Pb-Free MIL-STD-19500 /228 RoHS product forfor packing ”G” product packingcode codesuffix suffix "G" • RoHS 0.146(3.7) 0.130(3.3) Halogen product packing code code suffix Halogen freefree product forforpacking suffix"H" “H” z 0.012(0.3) Typ. 6 5 4 1 2 3 Mechanical data1 Moisture Sensitivity Level 0.040(1.0) 0.024(0.6) ina ry • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 MARKING:KA3 Method 2026 • Polarity : Indicated by cathode band Maximum Ratings @ Ta= 25°C unless otherwise specified • Mounting Position : Any Characteristic0.011 gram Symbol • Weight : Approximated 0.031(0.8) Typ. 0.031(0.8) Typ. Dimensions in inches and (millimeters) VRM Non-Repetitive Peak Reverse Voltage Value Unit 100 V RATINGS Marking Code Non-Repetitive Peak Forward Surge Current Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Power Dissipation (Note 1) Maximum DC Blocking Voltageto Ambient Thermal Resistance Junction IO @ t < 1ms RRM @ t < V1s VRMS (Note 1) VDC 12 20 13 IFSM30 14 40 14 Pd 21 20 RqJA 30 IO Tj , TSTG Peak Forward Surge Current 8.3 ms single half Ta = 25°C unless otherwise IFSM Electrical Characteristics @ sine-wave 15 50 superimposed on rated load (JEDEC method) Characteristic Typical Thermal Resistance (Note 2) RΘJA Symbol Reverse Breakdown Voltage (Note (Note1) 2) Typical Junction Capacitance CJ V(BR)R TJ Operating Temperature Range Storage Temperature Range Forward Voltage (Note 2) TSTG CHARACTERISTICS 18 80 28 40 50 625 60 80 Reverse Current (Note 2) Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage -55~+150 specified Min 75 -55 to +125 0.62 VF 250 ¾ ¾ ¾ Max ¾ 0.720 0.855 1.0 1.25 mA 10 A 100 56 70 mW 100 °C/W 1.0 30 115 150 120 200 Vol 105 140 Vol 150 200 Vol Am °C Am Conditions Unit 40 Test V 120 IR = 10mA -55 to +150 IF = 5.0mA IF = 10mA - 65 to +175 V IF = 50mA IF = 150mA ℃/ PF ℃ ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH V = 75VFM1100-MH FM1150-MH FM1200-MH UN VF Maximum Forward Voltage at 1.0A DC Total Capacitance V mA 16 4 1.5 60 35 200 42 Maximum and Average Forward Rectified Current Operating Storage Temperature Range V SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Pr el Average Rectified Output Current (Note 1) im MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS VRRM Peak Repetitive Reverse Voltage Working Peak Reverse Voltage 75 Ratings at 25℃ ambient temperature unless otherwise specified. VRWM VR DC Blocking Voltage Single phase half wave, 60Hz, resistive of inductive load. VR(RMS) RMS Reverse Voltage 53 For capacitive load, derate current by 20% Forward IFM Continuous Current (Note 1) 500 0.071(1.8) 0.056(1.4) @T A=125℃ NOTES: Recovery Time Reverse IR 0.50 ¾ 2.5 50 30 25 CT ¾ 4.0 trr ¾ 4.0 IR 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. mA R VR = 75V, 0.70mA 0.85Tj = 150°C 0.9 mA 0.5 VR = 25V, Tj = 150°C VR = 20V nA 10 VR = 0, f = 1.0MHz pF ns 0.92 Vol mAm IF = IR = 10mA, Irr = 0.1 x IR, RL = 100W Notes: 1. Resistance Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. 2- Thermal From Junction to Ambient 2. Short duration test pulse used to minimize self-heating. 2012-06 2012-1 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBD4448TWTHRU SOT-363 Plastic-Encapsulate Diode FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers Outline Drawing SOT-363 better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) .004(0.10)MIN. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" .087(2.20) • Epoxy : UL94-V0 rated flame retardant .071(1.80) .054(1.35) .045(1.15) Mechanical data 0.040(1.0) 0.024(0.6) ina ry • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.031(0.8) Typ. .030(0.75) .021(0.55) Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 Maximum RMS Voltage VRMS 14 21 28 35 Maximum DC Blocking Voltage VDC 20 30 40 50 .056(1.40) .047(1.20) Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) CJ Typical Junction Capacitance (Note 1) .004(0.10)MAX. Operating Temperature Range TJ Storage Temperature Range 80 100 115 150 120 200 Vol 42 56 70 105 140 Vol 60 80 100 150 200 Vol IO IFSM RΘJA Typical Thermal Resistance (Note 2) .010(0.25) .003(0.08) 18 10 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Pr el Marking Code .096(2.45) .071(1.80) im Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS 0.031(0.8) Typ. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 0.012(0.3) Typ. 1.0 30 40 120 -55 to +125 Am Am ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS VF .016(0.40) IR .004(0.10) Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ NOTES: .043(1.10) .032(0.80) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Maximum Forward Voltage at 1.0A DC 0.50 0.70 0.85 0.5 0.9 0.92 Vol 10 mAm 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2012-1 Rev.D CORP. WILLAS ELECTRONIC WILLAS ELECTRONIC CORP.