WILLAS FM120-M+ THRU VGFM11A-FN5 FM1200-M+ 90W SURFACE MOUNT UNI-DIRECTIONAL TVS DIODE-11V 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V mFN-523 PACKAGE SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to Package outline Features optimize board space. power loss, high efficiency. • Low off voltage:11V • Stand • High current capability, low forward voltage drop. Unidirectional • • High surge capability. Tj max: 150 °C • Operating for overvoltage protection. • Guardring acc. IEC 61000-4-2 • ESD-protection high-speed switching. • Ultra kV contact discharge ± 30epitaxial planar chip, metal silicon junction. • Silicon air discharge ± 30 kVparts meet environmental standards of • Lead-free 0.146(3.7) 0.130(3.3) mFN-523 0.012(0.3) Typ. 0.028(0.70) 0.020(0.50) 0.013(0.33) Package. • mini Flat No-Lead MIL-STD-19500 /228 product for packing chip code suffix "G" • RoHS passivated junction. • Glass 0.018(0.46) 0.014(0.36) 0.036(0.90) 0.028(0.70) 0.009(0.23) 0.071(1.8) 0.056(1.4) Halogen free product for packing code suffix "H" • Pb-Free package is available RoHS product for packing code suffix ”G” Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant Halogen free product for packing code suffix “H” : Molded plastic, • Case Color bandSOD-123H denotes cathode end • Polarity: , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. ry Method 2026 Applications • Polarity : Indicated by cathode band Position : Any • Mounting • MP3 Players • Weight : Approximated 0.011camcorders gram • Digital Cameras and 0.067(1.70) 0.059(1.50) 0.031(0.8) Typ. 0.028(0.70) 0.020(0.50) ina Dimensions in inches and (millimeters) Dimensions in inches and (millimeters) Maximum RMS Voltage Pr eli m • LCD BacklightRATINGS AND ELECTRICAL CHARACTERISTICS MAXIMUM Ratings at 25℃ ambient temperature unless otherwise specified. • Mobile Handsets Mechanical data Single phase half wave, 60Hz, resistive of inductive load. • PDA For capacitive load, derate current by 20% • Epoxy:UL94-V0 rated flame retardant • LED modules SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT RATINGS • Case : mFN-523 • Digital TV and Set-top Boxes Marking Code 12 13 14 15 16 18 10 115 120 • Mounting Position : Any 80 20 30 40 50 60 100 150 200 Maximum Recurrent Peak Reverse Voltage Volts V RRM • Other Portable Electronic Components Maximum DC Blocking Voltage VRMS 14 21 28 35 42 56 70 105 140 Volts VDC 20 30 40 50 60 80 100 150 200 Volts IO C unless otherwise noted) Maximum ratings (at T =25 Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single halfRating sine-wave superimposed on rated load (JEDEC method) IFSM SYMBOL Peak Pulse Power (tp=10/1000us Waveform) Typical Thermal Resistance (Note 2) RΘJA Peak Pulse Current Typical Junction Capacitance (Note 1) (tp=10/1000us Waveform) CJ P PP IPP -55 to +125 J discharge acc.TIEC 61000-4-2) (Air discharge acc. IEC 61000-4-2) TSTG Operating Temperature Range(Contact ESD immunity Storage Temperature Range Operating temperature CHARACTERISTICS Storage temperature NOTES: W ℃/W A PF ±30 -55 to +150 ±30 - 65 to +175 kV kV ℃ o -55~+150 0.50 -55~+150 T STG 0.70 ℃ C C0.9 0.85 0.5 IR @T A=125℃ 0.92 Volts mAmps 10 Electrical characteristics (at T =25 C unless otherwise ) o A 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. PARAMETER Amps UNIT FM1200-MH UNIT SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH o Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage V ESD Amps 90 5.0 40 120 TJ VF Maximum Forward Voltage at 1.0A DC 1.0 30 VALUE o A 2- Thermal Resistance From Junction to Ambient TEST CONDITIONS Reverse Stand Off Voltage SYMBOL MIN. TYP. MAX. UNIT VRWM - - 11.0 V IR - - 1.0 uA V Reverse Leakage Current V RWM = 11.0V Reverse Breakdown Voltage I T= 1.0mA VBR 12.2 - 13.5 Clamping Voltage I PP = 5.0 A , tp=10/1000us VC - - 18.0 V V R = 0V , f = 1MHz CJ - pF Junction Cap acitance - 220 2012-06 WILLAS ELECTRONIC CORP. 2012-0 WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU VGFM11A-FN5 FM1200-M+ 90W SURFACE MOUNT UNI-DIRECTIONAL TVS DIODE-11V 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V mFN-523 PACKAGE SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. Electrical characteristics (at T • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of SOD-123H A =25 oC unless otherwise noted) 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. I 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical dataV C V BR V RWM 0.031(0.8) Typ. ry Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram V 0.040(1.0) 0.024(0.6) IR I0.031(0.8) T Typ. • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 Dimensions in inches and (millimeters) ina I PP MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Uni-Directional TVS Pr eli m Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. V BR : Breakdown voltage For capacitive load, derate current by 20% @I T I T : Test Current SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Off V RWM : Reverse Stand Marking Code 12 13 Voltage 14 15 16 18 10 115 120 20 30 40 Current 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volts VRRMReverse Leakage I R : Maximum @V RWM Volts 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage V RMS V C : Clamping Voltage @ I PP Volts Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC Reverse I PP : Maximum Peak Pulse Current RATINGS Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) IO IFSM RΘJA Typical Thermal Resistance (Note 2) 1.0 30 CJ Rating and characteristic curves -55 to +125 TJ Typical Junction Capacitance (Note 1) Operating Temperature Range Storage Temperature Range Amps Amps 40 120 ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT FIG.1Pulse Waveform VF Maximum Forward150 Voltage at 1.0A DC 0.50 NOTES: half value IPPM/2 10/1000 us waveform 50 mAmps 200 180 160 140 120 100 80 40 td 0 2012-0 Volts 60 20 0 2012-06 0.92 f=1MHZ T=25°C J 10 220 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 0.5 240 peak value IPPM 100 FIG.2-Typical Junction Capactiance 0.9 0.70 0.85 260 Capacitance, (pF) % Of Pe ak Pulse Cur ren t pulse width (td) is defined tr=10usat @T Maximum Average Reverse Current asA=25℃ the point where IR the peak current decays to 50% @T A=125℃ Rated DC Blocking Voltage 1.0 2.0 t, Time (ms) 3.0 4.0 0 1 2 3 4 5 6 7 8 9 10 Reverse Voltage ,(V) WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU VGFM11A-FN5 FM1200-M+ 90W SURFACE MOUNT UNI-DIRECTIONAL TVS DIODE-11V 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V mFN-523 PACKAGE SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to Pinning information optimize board space. • Low power loss, high efficiency. • High current capability, Pin low forward voltage drop. Simplified outline • High surge capability. • Guardring for overvoltage protection. cathode high-speed switching. • Ultra Pin1 1 Pin2 epitaxialanode planar chip, metal silicon junction. • Silicon • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 2 0.012(0.3) Typ. Symbol 0.071(1.8) 0.056(1.4) 1 2 MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , Marking • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. ry Method 2026 Marking code Dimensions in inches and (millimeters) ina Type number • Polarity : Indicated by cathode band 0.031(0.8) Typ. Position : Any • Mounting VG FM11A-FN5 • Weight : Approximated 0.011 gram X MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Pr eli m Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS Marking Code SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum Recurrent Peak Reverse Voltage VRRM 12 20 Suggested solder pad layout 14 VRMS Maximum RMS Voltage Maximum DC Blocking Voltage VDC Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts 21 28 35 42 56 70 105 140 Volts 30 40 50 60 80 100 150 200 Volts 1.0 30 (1.30) 0.052 40 120 -55 to +125 CHARACTERISTICS Amps ℃/W PF ℃ - 65 to +175 ℃ (0.50) 0.020 FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH VF Maximum Forward Voltage at 1.0A DC Amps -55 to +150 TSTG Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 20 13 30 0.50 0.70 0.5 IR @T A=125℃ 0.85 10 0.9 0.92 UNIT Volts mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient (0.40) 0.016 (0.50) 0.020 (0.40) 0.016 Dimensions in inches and (millimeters) 2012-06 WILLAS ELECTRONIC CORP. 2012-0 WILLAS ELECTRONIC CORP.