RoHS MMBT9014LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 PRF-AMPLIFIER,LOW LEVEL&LOW NOISE 1 Complemen to MMPT9015LT1 Collector-current:Ic=100mA Collector-Emiller Voltage:V CE =45V High Totalpower Dissipation Pc=225mW High life And Good Linearity 2 1. V CBO V CEO R T V EBO Ic Collector Current o PD Collector Dissipation Ta=25 C* Tj Junction Temperature C E L Storage Temperature Electrical Characteristics Parameter O T stg Symbol C 0.4 0.95 2.9 1.9 0.95 Collector-Base Voltage Collector-Emitter Voltage IC N Symbol Emitter-Base Voltage 1.BASE 2.EMITTER 3.COLLECTOR 2.4 1.3 ABSOLUTE MAXIMUM RATINGS Characteristic D T ,. L O 3 Unit:mm o (Ta=25 C) Rating Unit 50 V 45 V 5 V 100 mA 225 mW 150 O -55~150 O C C o (Ta=25 C) MIN. TYP. MAX. Unit Condition BV CBO 50 V I C =100 A I E =0 Collector-Emitter Breakdown Voltage# BV CEO 45 V I C =1mA I B =0 Emitter-Base Breakdown Voltage BV EBO 5 V I E =100 A I C =0 Collector -Base Cutoff Current I CBO 50 nA V CB =50V, V C =0 Emitter-Base Cutoff Current I EBO 50 nA V CB =5V, I C =0 DC Current Gain H FE Collector-Emitter Saturation Voltage V CE(sat) 0.3 V I C =100mA, I B =5mA Base-Emitter Saturation Voltage V BE(sat) 1.00 V V I C =100mA, I B =5mA PF V CB =10V, I E =10mA,f=100MHz Collector-Base Breakdown Voltage J E E W Base-Emitter on Voltage V BE(on) Output Capacitance C ob Current Gain-Bandwidth Product fT Noise Figure NF 60 300 1000 0.58 0.63 2.2 V CE =5V, I C =1mA 6.7 3.5 V C e =5V, I C =2mA MHz V CE =5V I C =10mA 150 270 dB 10 V CE =5V I C =0.2mA f=1MHz Rs=2Kohm o *Total Device Dissipation:FR=1X0.75X0.062 in Board Derate 25 C # Pulse Test: Pulse Width 300uS Duty cycle 2% DEVICE MARKING: MMBT9014LT1=L6 WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] RoHS MMBT9014LT1 Typical Characteristics 1000 90 I B =160 A I B =140 A I B =120 A 80 70 h FE ,DC CURREN GAIN I C (mA),COLLECTOR CUTTENT 100 I B =100 A 60 I B =80 A 50 I B =60 A 40 I B =40 A 30 20 I B =20 A 100 IC 10 0 10 20 30 40 10 1 50 V CE (V),COLLECTOR-EMMITTER VOLTAGE VBE(sat),VCE(sat)[mV],SATURATION VOLTAGE R T 1000 V BE (sat) C E L 100 V CE (sat) 10 1 E 10 J E I C =20 I B 100 1000 I C (mA),COLLECTOR CURRENT Base-Emitter Saturation Voltage Collector-Emitter Satruation Voltage O C 10 100 1000 I C (mA),COLLECTOR CURRENT N Static Characteristic fT(MHz),CURRENT GAIN-BANDWIDTH PRODUCT 0 D T ,. L O Vc E =5V DC Current Gain 1000 Vc E =5V 100 10 1 10 100 I C (mA),COLLECTOR CURRENT Current Gain Bandwidth Product W WEJ ELECTRONIC CO. Http:// www.wej.cn 1000 E-mail:[email protected]