RoHS 2SC945LT1 NPN EPITAXIAL SILICON TRANSISTOR * * * * D T ,. L Collector Current: Ic= 150mA Collector-Emitter Voltage:Vce= 50V High Total Power Dissipation:Pc=225mW High Hfe And Good Linearity 1. 1.BASE 2.EMITTER 3.COLLECTOR 2.4 1.3 Collector-Base Voltage Vcbo 60 V Collector-Emitter Voltage Vceo 50 V Collector Current Ic 150 mA Collector Dissipation Ta=25 * PD 225 mW Junction Temperature Tj 150 Storage Temperature Tstg N -55-150 O ELECTRICAL CHARACTERISTICS at Ta=25 R T Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown C E L Voltage# Collector-Base Cutoff Current DC Current Gain BVcbo 60 V Ic=100uA Ie=0 BVceo 50 V Ic= 1mA nA Vcb= 60V Ie=0 Icbo Hfe Output Capacitance Cob E IC 100 70 Unit 700 2.2 fT Max Unit:mm Min Vce(sat) Test Conditions Ib=0 Vce= 6V Ic= 1mA 0.3 V Ic= 100mA Ib= 10mA 3.5 PF Vcb= 10V Ie=0 f=1MHz 150 MHz Vce= 5V Ic= 10mA Total Device Dissipation : FR=1X0.75X0.062in Board,Derate 25 . J E # Typ C O Symbol Collector-Emitter Saturation Voltage Current Gain-Bandwidth Product * Unit 0.4 Rating 2.9 1.9 Symbol 0.95 Characteristic 0.95 ABSOLUTE MAXIMUM RATINGS at Ta=25 Pulse Test : Pulse Width 300uS,Duty cycle 2% DEVICE MARKING: 2SC945LT1=HF W WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]