RoHS MMBTA05LT1 NPN EPITAXIAL SILICON TRANSISTOR D T ,. L AMPLIFIER TANSISTOR High Collector-Emitter Voltage:Vcbo=60V * Collector Current: Ic=500mA * Collector Dissipation: Pc=225mW(Ta=25 1. 1.BASE 2.EMITTER 3.COLLECTOR ABSOLUTE MAXIMUM RATINGS at Ta=25 Symbol Rating Vcbo 60 V Collector-Emitter Voltage Vceo 60 V Emitter-Base Voltage Vebo 4 V Collector Current Ic 500 mA Collector Dissipation Ta=25 * PD 225 mW Junction Temperature Tj 150 Storage Temperature Tstg -55-150 Characteristic Symbol R T Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage# Emitter-Base Breakdown Voltage C E L Collector Cutoff Current Collector Cutoff Current DC Current Gain DC Current Gain Collector-Emitter Saturation Voltage E Base-Emitter On Voltage BVcbo 60 BVceo 60 BVebo 4 IC N Typ Max Unit:mm Test Conditions V Ic=100uA Ie=0 V Ic= 1mA V Ie= 100uA Ic=0 Ib=0 Icbo 100 nA Vcb= 60V Ie=0 Ices 100 nA Vce= 60V Ib= 0 Hfe1 80 Hfe2 80 250 Vce=1V Ic=10mA Vce=1V Ic=100mA 0.25 V Ic=100mA Ib=10mA Vbe(on) 1.2 V Ic=100mA Vce=1V MHz Vce=2V Ic=10mA fT 100 f=100MHz * Total Device Dissipation : FR=1X0.75X0.062in Board,Derate 25 . # Pulse Test : Pulse Width DEVICE MARKING: Unit C O Vce(sat) Current Gain-Bandwidth Product J E O Min 2.9 1.9 0.95 0.95 Collector-Base Voltage ELECTRICAL CHARACTERISTICS at Ta=25 W 2.4 1.3 Unit 0.4 Characteristic 300uS,Duty cycle 2% MMBTA05LT1=1H WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]