WINNERJOIN 2SC3265LT1

RoHS
2SC3265LT1
NPN EPITAXIAL SILICON TRANSISTOR
SOT-23
D
T
,. L
O
3
1
2
1.
Collector Current:Ic=500mA
o
2.4
1.3
0.95
0.95
2.9
1.9
Collector Dissipation:Pc=225mW (Tc=25 C)
ABSOLUTE MAXIMUM RATINGS
Collector-Base Voltage
Collector-Emitter Voltage
V CBO
Emitter-Base Voltage
V EBO
V CEO
R
T
Ic
Collector Current
o
PD
Collector Dissipation Ta=25 C*
Tj
Junction Temperature
T stg
Storage Temperature
C
E
L
Electrical Characteristics
Characteristic
Symbol
IC
N
Symbol
Characteristic
O
C
1.BASE
2.EMITTER
3.COLLECTOR
0.4
Complement to 2SA1298LT1
Rating
40
V
25
V
6
V
500
mA
225
mW
150
O
-55-150
O
C
C
o
(Ta=25 C)
MIN. TYP. MAX. Unit
Test Conditions
BV CBO
40
V
I C =100uA I E =0
Collector-Emitter Breakdown Voltage#
BV CEO
25
V
I C =1mA I B =0
Emitter-Base Breakdown Voltage
BV EBO
6
V
I E =100uA I C =0
Collector Cutoff Current
I CBO
100
nA
V CB =35V, I E =0
Emitter Cutoff Current
I EBO
100
nA
V EB =6V, I C =0
DC Current Gain
h FE1
J
E
o
(Ta=25 C)
Unit
Collector-Base Breakdown Voltage
E
Unit:mm
V CE =1V, I C =5mA
45
160
300
Collector-Emitter Saturation Voltage
V CE(sat)
0.28
0.5
V
I C =500mA, I B =50mA
Base-Emitter Saturation Voltage
V BE(sat)
0.98
1.2
V
I C =500mA, I B =50mA
Base-Emitter Voltage
V BE
0.66
1
V
I CE =1V, I C =10mA
Output Capacitance
C ob
9
PF
V CB =10V, I E =0,f=1MHz
Current Gain-Bandwidth Product
fT
DC Current Gain
h FE2
85
DC Current Gain
h FE3
30
W
100
V CE =1V, I C =50mA
V CE =1V, I C =500mA
190
MHz V CE =10V, I C =50mA
o
*Total Device Dissipation:FR=1X0.75X0.062 in Board ,Derate 25 C
# Pulse Test: Pulse Width 300uS ,Duty cycle
2%
2SC3265LTI=A6
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:[email protected]