DATA SHEET UF100~UF1010 SEMICONDUCTOR ULTRAFAST SWITCHING RECTIFIER VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere FEATURES Unit:inch(mm) DO-41 • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Copound • Class passivaeed Jumction In DO-41 Package .107 (2.7) .080 (2.0) DIA. • 1.0 ampere operation atTA=55°C with no thermal runaway • Exceeds environmental standards at terminals 1.0 (25.4) MIN. • Ultra fastswitching for high efficiency • High temperature soldering: 260 °C .205 (5.2) .160 (4.1) • Pbfree product at available :99% Sn above meet RoHS environment substance directive request MECHANICAL DATA • Case: Molded plastic, DO-41 1.0 (25.4) MIN. .034 (.86) .028 (.71) DIA. • Terminals: Axial leads, solderable per MIL-STD-202, Method 208 • Polarity: Band denotes cathode • Mounting Position: Any • Weight: 0.013 ounce, 0.3 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C Jambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. CHARACTERISTICS SYMBOL UF100 UF101 UF102 UF104 UF106 UF108 UF1010 UNITS Maximum Recurrent Peak Reverse V oltage 50 100 200 400 600 800 1000 V Maximum RMS Voltage 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage 50 100 200 400 600 800 1000 V Maximum Average Forward Rectified Current @TL =75°C 1.0 A 30.0 A Peak For ward Surge Current 8.3ms single half sine- wave super imposed on rated load (JEDEC METHOD) Maxi mum f orward Voltage at 1.0A DC Maxi mum DC Reverse Cur rent @TJ =25°C at Rated DC Blocking Voltage @TJ =100°C VF 1.00 IR 1.30 1.50 1.70 V 5 µA 100 µA Maximum Reverse Recovery Time (Note 1) CJ 17.0 pF Typical Junction Resistance(Note 2)R JA RθJL 60.0 °C/W Reverse Recovery Time IF=.5A, IR=1A, Irr =.25A Operating and Storage Temperature Range TRR 50 75 -55 to +150 TSTG ns °C NOTES: 1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC 2. Thermal resistance from junction to ambient and from junction to lead length 0.375”(9.5mm) P.C.B. mounted http://www.yeashin.com 1 REV.02 20110725 RATING AND CHARACTERISTIC CURVES UF100~UF1010 trr +0.5A 0 -0.25 -1.0 NOTE:1.Rise Time = 7ns max. Input Impedance = 1 megohm. 22pF 2.Rise Time = 10ns max. 1cm SET TIME BASE FOR 50 ns/cm Source Impedance = 50 Ohms VERAGE FORWARD CURRENT, AMP Fig. 1-REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 10 UF100 TYPICAL IFM, Apk 1 UF1010 TJ = 25 °C 0.1 0.01 0 .2 .4 .6 .8 1.0 1.2 1.4 1.6 SINGLE PHASE HALF WAVE 60Hz RESISSTIVE OR INDUCTIVE LOAD .375" LEAD LENGTHS 1.0 0.8 0.6 0.4 0.2 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE, °C Fig. 2-FORWARD CHARACTERISTICS Fig. 3-FORWARD CURRENT DERATING CURVE FORWARD SURGE CURRENT, AMPERES FORWARD VOLTAGE-VFM(Vpk) 100 JUNCTION CAPACITANCE, pF 1.2 TJ = 25 °C f = 1.0MHz Vsig = 50m Vp-p 10 1 0.1 1 10 100 REVERSE VOLTAGE, VOLTS 30 25 20 15 10 5 .1 .5 1 2 5 10 20 50 100 200 500 1000 NUMBER OF CYCLES AT 60Hz Fig. 4-TYPICAL JUNCTION CAPACITANCE http://www.yeashin.com 35 Fig. 5-PEAK FORWARD SURGE CURRENT 2 REV.02 20110725