DATA SHEET UF1000CT~UF1008CT SEMICONDUCTOR ULT RAFAST SWITCHING RECTIFIERS VOLTAGE- 50 to 800 Volts CURRENT - 10.0 Ampere FEATURES TO-220AB • Plastic package has Underwriters Laboratory Unit:inch(mm) .196(5.0) .163(4.16) Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. .419(10.66) MAX • Exceeds environmental standards of MIL-S-19500/228 .054(1.39) .045(1.15) DIA .139(3.55) .MIN .269(6.85) .226(5.75) • Low power loss, high efficiency. .624(15.87) .548(13.93) • Low forwrd voltge, high current capability PIN1 • High surge capacity. 2 3 .177(4.5) .MAX • Ultra fast recovery times, high voltage. .114(2.9) .098(2.5) .50(12.7) MAX • High temperature soldering : 260OC / 10 seconds at terminals • Pb free product at available : 99% Sn above meet RoHS environment .038(0.96) .019(.5) substance directive request .100(2.54) .025(0.65) MAX MECHANCALDATA • Case: TO-220AB full molded plastic package + AC • Terminals: Lead solderable per MIL-STD-202, Method 208 Positive CT • Polarity: As marked. AC • Standard packaging: Any • Weight: 0.08 ounces, 2.24grams. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% UF1000CT UF1001CT UF1002CT UF1003CT UF1004CT UF1006CT UF1008CT UNITS Maximum Recurrent Peak Reverse Voltage 50 100 200 300 400 600 800 V Maximum RMS Voltage 35 70 140 210 280 420 560 V Maxi mum DC Blocking Voltage 50 100 200 300 400 600 800 V Maximum Average Forward Rect if ied Current at Tc=100°C 10 A 125 A Peak For ward Surge Current , 8.3 ms single half sine- wave superimposed on rated load (J EDEC method) Maximum Instantaneous Forward Vol tage 1.0 at 5.0A per element 1.30 Maxi mum DC Reverse Current (Note 1) Ta=25° C 10 at Rated DC Block ing Vol tage Ta=125°C 500 Maxi mum DC Reverse Cur rent (Note 1) at Rated DC Block ing Voltage Ta=25°C 50 Ta=125°C Maximum Reverse Recovery Time (Note 2) 50 Typical Thermal Resistance Note RθJC Oper ati ng and Storage Temperature Range TJ 1.70 V µA 100 pF 75 ns 15 °C/W -55 to +150 °C NOTES: 1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC. 2. Reverse Recovery Test Conditions: IF=.5A, IR=1A, Irr=.25A. 3. Thermal resistance from Junction to ambient and from junction to lead 0.375” (9.5mm) P.C.B mounted. http://www.yeashin.com 1 REV.02 20110725 RATINGAND CHARACTERIS TICCURVES UF1000CT~UF1008CT t rr +0.5A 10 Noninductive 50 Noninductive 0 (-) PULSE GENERATOR NOTE 2 (+) 25Vdc (approx) (-) 1 Non inductive -0.25 (+) OSCILLOSCCOPE NOTE 1 NOTES: 1.Rise Time=7ns max -1.0 Input Impedance=1 megohm. 22pF 1cm SET TIME BASE FOR10ns/cm 2. Rise Time=10ns max. Source Impedance = 50 Ohms AV E R A G E F O R WA R DC U R R E N T Fig.1-REVERSERECOVERY TIME CHARACTERISTIC AND TEST CIRCUITDIAGRAM 100 INSTANEOUS FORWARD C URRENT,(A) 300-400V 50-200V 10 600-800V 1 10.0 7.5 5.0 2.5 0 0 50 150 100 CASE TEMPERATURE,O C Fig.3-FORWARD CURRENTDERATING CURVE FORWARD SURGE CURRENT, AMPERES 0.1 O T=25 C J 0.01 .4 .8 .6 1.0 1.2 1.4 1.6 1.8 2.0 FORWARD VOLTAGE , VOLTS Fig. 2- FORWARD CHARACTERISTICS 1000 140 120 100 80 60 40 20 10 1 O TJ= 125 C 100 NUMBER O F CYCLES AT 60Hz 100 Fig.4-PEAK FORWARD SURGE CURRENT 240 C A PA C I TA N C E ,p F IR- REVERSE LEAKAG E CURRENT. M IC RO AM PERES 12.5 10 1.0 O TJ= 25 C 200 160 120 O TJ = 25 C 80 40 0 0.1 20 40 60 80 100 120 140 2 5 10 20 50 100 200 500 REVERSE VOLTAGE,V OLTS %o f PIV. VOLTS Fig.6-TYPICAL JUNCTION CAPACIT ANCE Fig.5- TYPICAL REVERSE CHARACTERISTICS http://www.yeashin.com 1 2 REV.02 20110725