AOSMD AO4718

AO4718
30V N-Channel MOSFET
SRFET
General Description
TM
Features
TM
SRFET The AO4718 uses advanced trench
technology with a monolithically integrated
Schottky diode to provide excellent RDS(ON),and
low gate charge. This device is suitable for use
as a low side FET in SMPS, load switching and
general purpose applications.
VDS (V) = 30V
ID =15A (VGS = 10V)
RDS(ON) < 9mΩ (VGS = 10V)
RDS(ON) < 14mΩ (VGS = 4.5V)
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D
D
D
Bottom View
D
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current AF
±20
IDSM
12
IDM
80
IAS, IAR
25
V
15
TA=70°C
Pulsed Drain Current B
Avalanche Current B
B
Avalanche energy L=0.3mH
TA=25°C
Power Dissipation
30
VGS
TA=25°C
Units
Maximum
EAS, EAR
94
TJ, TSTG
Thermal Characteristics
Parameter
Symbol
t ≤ 10s
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Lead C
Steady-State
Alpha & Omega Semiconductor, Ltd.
W
2.0
Junction and Storage Temperature Range
Maximum Junction-to-Ambient A
mJ
3.1
PD
TA=70°C
A
RθJA
RθJL
-55 to 150
Typ
32
60
17
°C
Max
40
75
24
Units
°C/W
°C/W
°C/W
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AO4718
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250uA, VGS=0V
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
On state drain current
VDS=VGS ID=250µA
1.3
VGS=10V, VDS=5V
80
TJ=125°C
VGS=10V, ID=15A
Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=12A
gFS
Forward Transconductance
VDS=5V, ID=15A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode + Schottky Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Units
V
0.1
Zero Gate Voltage Drain Current
RDS(ON)
Max
30
VDS=30V, VGS=0V
IDSS
ID(ON)
Typ
10
0.1
µA
1.65
2.5
V
7.3
9
10.3
13
10.8
14
mΩ
0.5
V
4
A
A
VGS=0V, VDS=0V, f=1MHz
mΩ
43
0.41
1620
VGS=0V, VDS=15V, f=1MHz
mA
S
1950
pF
382
pF
162
pF
1.2
Ω
1.8
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
24.7
32
nC
Qg(4.5V) Total Gate Charge
12
16
nC
VGS=10V, VDS=15V, ID=15A
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Qrr
Body Diode Reverse Recovery Charge IF=15A, dI/dt=300A/µs
VGS=10V, VDS=15V, RL=1Ω,
RGEN=3Ω
IF=15A, dI/dt=300A/µs
4.0
nC
5.6
nC
6.3
ns
9.3
ns
21.6
ns
5.4
ns
19
23
36.4
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
Rev3: Nov. 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AO4718
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
30
10V
60
20
ID(A)
4V
ID (A)
VDS=5V
25
4.5V
40
15
3.5V
10
20
125°
25°C
5
VGS=3V
0
0
0
1
2
3
4
5
1
2
VDS (Volts)
4
5
VGS(Volts)
Figure 2: Transfer Characteristics
DYNAMIC PARAMETERS
Figure 1: On-Region Characteristics
15
Normalized On-Resistance
1.8
VGS=4.5V
13
RDS(ON) (mΩ )
3
11
9
VGS=10V
7
5
ID=15A
VGS=10V
1.6
1.4
1.2
ID=12A
VGS=4.5V
1
0.8
0
5
10
15
20
25
30
0
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
60
90
120
150
180
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
30
1.0E+02
ID=15A
1.0E+01
125°C
25
20
IS (A)
RDS(ON) (mΩ )
1.0E+00
125°C
15
25°C
1.0E-01
1.0E-02
1.0E-03
10
1.0E-04
25°C
1.0E-05
5
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AO4718
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2500
10
VDS=15V
ID=15A
Ciss
2000
Capacitance (pF)
VGS (Volts)
8
6
4
1500
1000
Coss
2
500
0
Crss
0
0
5
10
15
20
25
30
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
DYNAMIC PARAMETERS
1000.0
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
100
100.0
TJ(Max)=150°C
TA=25°C
80
RDS(ON)
limited
10.0
10µs
100µ
1m
10ms
0.1s
1.0
TJ(Max)=150°C
TA=25°C
0.1
0.0
0.01
0.1
DC
1
VDS (Volts)
1s
10s
10
Power (W)
ID (Amps)
5
60
40
20
0
0.0001
100
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Zθ JA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
0.01
Single Pulse
0.001
0.00001
0.0001
0.001
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=75°C/W
0.01
0.1
PD
Ton
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
Alpha & Omega Semiconductor, Ltd.
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AO4718
Gate Charge Test Circuit & W aveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & W aveform s
RL
Vds
Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclam ped Inductive Switching (UIS) Test Circuit & W aveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & W aveform s
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
L
Vgs
Ig
Alpha & Omega Semiconductor, Ltd.
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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