AO4771 30V P-Channel MOSFET General Description Product Summary AO4771 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch,or for "standard buck" DC-DC conversion applications. VDS -30V -4A ID (at VGS=-10V) RDS(ON) (at VGS=-10V) < 68mΩ RDS(ON) (at VGS=-4.5V) < 105mΩ Schottky VKA 30V IF 4A VF (at IF=1A) <0.5V SOIC-8 Top View Bottom View A A S G 1 2 3 4 8 7 6 5 D A Top View K K D D G K S Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol MOSFET Drain-Source Voltage VDS -30 Gate-Source Voltage Continuous Drain Current Pulsed Drain Current ±20 VGS TA=25°C C Units V V -4 ID TA=70°C Schottky -3 A IDM -18 Avalanche Current C IAS, IAR 11 A Avalanche energy L=0.1mH C EAS, EAR 6 mJ Schottky reverse voltage Continuous Forward TA=25°C VKA Current Junction and Storage Temperature Range Parameter: Schottky Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead Rev 1: Nov. 2010 2.5 2 2 1.3 1.3 TJ, TSTG -55 to 150 -55 to 150 °C Symbol Typ 48 74 32 Max 62.5 90 40 Units °C/W °C/W °C/W 49 72 31 62.5 90 40 °C/W °C/W °C/W PD TA=70°C Thermal Characteristics Parameter: MOSFET Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead 4 IF TA=70°C TA=25°C Power Dissipation B 30 t ≤ 10s Steady-State Steady-State t ≤ 10s Steady-State Steady-State RθJA RθJL RθJA RθJL www.aosmd.com W Page 1 of 6 AO4771 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -30 Typ Max V VDS=-30V, VGS=0V -1 IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.3 ID(ON) On state drain current VGS=-10V, VDS=-5V -18 TJ=55°C -5 VDS=0V, VGS= ±20V ±100 VGS=-10V, ID=-4A Units -1.8 -2.3 µA nA V A 56 68 79 95 VGS=-4.5V, ID=-3A 83 105 mΩ VDS=-5V, ID=-4A 8 -1 V -2 A RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance -0.8 mΩ S 230 290 350 pF 40 60 80 pF 25 40 55 pF 7.5 16 24 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 4.6 5.8 7 nC Qg(4.5V) Total Gate Charge 2.2 2.8 3 nC 0.9 1.1 1.3 nC 0.8 1.3 1.8 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-4A VGS=-10V, VDS=-15V, RL=3.75Ω, RGEN=3Ω 6 ns 5 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-4A, dI/dt=100A/µs 8 10 12 Qrr Body Diode Reverse Recovery Charge IF=-4A, dI/dt=100A/µs 16 20 24 ns nC 0.5 V SCHOTTKY PARAMETERS Forward Voltage Drop VF Irm Maximum reverse leakage current CT Junction Capacitance IF=1A 21 ns 9 ns 0.4 VR=24V 0.05 VR=24V, TJ=125°C VR=15V mA 10 pF 56 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 1: Nov. 2010 www.aosmd.com Page 2 of 6 AO4771 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 20 -10V -8V VDS=-5V -4.5V 15 6 -4.0V -ID(A) -ID (A) 8 10 4 125°C -3.5V 5 2 25°C VGS=-3V 0 0 0 1 2 3 4 -VDS (Volts) Fig 1: On-Region Characteristics(Note E) 5 0 120 2 3 4 -VGS(Volts) Figure 2: Transfer Characteristics(Note E) 5 Normalized On-Resistance 1.6 100 RDS(ON) (mΩ ) 1 VGS=-4.5V 80 60 VGS=-10V ID=-4A 1.4 1.2 VGS=-4.5V ID=-3A 1 VGS=-10V 0.8 40 0 1 2 3 4 5 6 7 0 8 25 75 100 125 150 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature(Note E) -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage(Note E) 220 50 175 1E+01 1E+00 140 1E-01 -IS (A) RDS(ON) (mΩ ) ID=-4A 180 125°C 125°C 25°C 1E-02 100 1E-03 60 25°C 1E-04 20 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage(Note E) Rev 1: Nov. 2010 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics(Note E) Page 3 of 6 AO4771 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 400 VDS=-15V ID=-4A Ciss Capacitance (pF) -VGS (Volts) 8 6 4 300 200 Coss 100 2 Crss 0 0 0 1 2 3 4 5 0 6 -Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 30 10000 100.0 TJ(Max)=150°C TA=25°C 10µs RDS(ON) limited 100µs 1.0 1ms 1000 Power (W) -ID (Amps) 10.0 100 10ms 0.1 10 TJ(Max)=150°C TA=25°C DC 10s 0.0 1 0.01 0.1 1 -VDS (Volts) 10 100 0.000001 0.0001 0.01 1 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton Single Pulse T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 1: Nov. 2010 www.aosmd.com Page 4 of 6 AO4771 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 280 Capacitance (pF) IF (Amps) 240 1 125°C 25°C 200 160 120 80 40 0 0.1 0 0.2 0.4 0.6 0.8 1 0 1.2 10 15 20 25 30 10 0.50 Leakage Current (mA) IF=1A 0.45 0.40 VF (Volts) 5 VKA (Volts) Figure 13: Schottky Capacitance Characteristics VF (V) Figure 12: Schottky Forward Characteristics 0.35 0.30 IF=0.5A VKA=30V 1 0.1 VKA=24V 0.01 0.25 0.20 0.001 0 25 50 75 100 125 150 Temperature (°C) Figure 14: Schottky Forward Drop vs. Junction Temperature Rev 1: Nov. 2010 www.aosmd.com 0 25 50 75 100 125 150 Temperature (°C) Figure 15: Schottky Leakage Current vs. Junction Temperature Page 5 of 6 AO4771 Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) t d(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev 1: Nov. 2010 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds RθJL www.aosmd.com Page 6 of 6