AOSMD AOD5N50

AOD5N50
500V,5A N-Channel MOSFET
General Description
Product Summary
The AOD5N50 is fabricated using an advanced high
voltage MOSFET process that is designed to deliver high
levels of performance and robustness in popular AC-DC
applications.By providing low RDS(on), Ciss and Crss along
with guaranteed avalanche capability this device can be
adopted quickly into new and existing offline power supply
designs.
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VDS
ID (at VGS=10V)
5A
< 1.6Ω
RDS(ON) (at VGS=10V)
100% UIS Tested!
100% Rg Tested!
TO252
DPAK
Top View
Bottom View
D
D
D
G
S
G
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain
CurrentB
TC=25°C
TC=100°C
Pulsed Drain Current C
Repetitive avalanche energy
C
Single plused avalanche energy
H
Peak diode recovery dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
A,G
Maximum Junction-to-Ambient
Maximum Case-to-sink A
Maximum Junction-to-CaseD,F
Rev0: June 2010
Units
V
±30
V
5
ID
3.1
IDM
Avalanche Current C
Maximum
500
A
17
IAR
2.8
A
EAR
118
mJ
EAS
dv/dt
235
5
104
mJ
V/ns
W
0.83
-50 to 150
W/ oC
°C
300
°C
PD
TJ, TSTG
TL
Symbol
RθJA
RθCS
RθJC
Typical
43
Maximum
55
Units
°C/W
1
0.5
1.2
°C/W
°C/W
Page 1 of 6
AOD5N50
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
ID=250µA, VGS=0V, TJ=25°C
500
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Zero Gate Voltage Drain Current
IDSS
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V, TJ=150°C
ID=250µA, VGS=0V
VDS=500V, VGS=0V
Gate-Body leakage current
VDS=0V, VGS=±30V
Gate Threshold Voltage
VDS=5V ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
1
µA
10
±100
4.1
4.5
nΑ
V
VGS=10V, ID=2.5A
1.2
1.6
Ω
VDS=40V, ID=2.5A
5
1
V
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
V/ C
0.6
VDS=400V, TJ=125°C
IGSS
Coss
V
o
VGS(th)
ISM
600
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=400V, ID=5A
3.4
0.76
S
5
A
17
A
430
538
670
pF
40
58
80
pF
2.5
4.5
7
pF
1.2
2.3
3.5
Ω
9
11.5
14
nC
3
3.8
4.6
nC
2
4.1
6.2
nC
VGS=10V, VDS=250V, ID=5A,
RG=25Ω
18
ns
32
ns
34
ns
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=5A,dI/dt=100A/µs,VDS=100V
145
182
220
Qrr
Body Diode Reverse Recovery Charge IF=5A,dI/dt=100A/µs,VDS=100V
1.7
2.2
2.7
22
ns
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in
setting the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=150°C.
G.These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. L=60mH, IAS=2.8A, VDD=150V, RG=10Ω, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: June 2010
www.aosmd.com
Page 2 of 6
AOD5N50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
100
10V
VDS=40V
8
-55°C
ID(A)
ID (A)
10
6.5V
6
6V
125°C
4
1
VGS=5.5V
2
25°C
0.1
0
0
5
10
15
20
25
2
30
4
VDS (Volts)
Fig 1: On-Region Characteristics
8
10
3
4.0
Normalized On-Resistance
3.5
3.0
RDS(ON) (Ω)
6
VGS(Volts)
Figure 2: Transfer Characteristics
VGS=10V
2.5
2.0
1.5
1.0
0.5
2
4
6
8
10
12
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
1.2
VGS=10V
ID=2.5A
2
1.5
1
0.5
0
-100
0.0
0
2.5
-50
0
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+02
ID=30A
125°C
40
1.0E+00
1
IS (A)
BVDSS (Normalized)
1.0E+01
1.1
125°C
25°C
1.0E-01
1.0E-02
0.9
25°C
0.8
-100
-50
0
1.0E-03
50
100
150
200
1.0E-04
TJ (oC)
Figure 5: Break Down vs. Junction Temperature
Rev0: June 2010
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0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
Page 3 of 6
AOD5N50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10000
15
VDS=400V
ID=2.5A
Capacitance (pF)
VGS (Volts)
12
9
6
Coss
100
Crss
10
3
1
0
0
3
6
9
12
15
Qg (nC)
Figure 7: Gate-Charge Characteristics
0.1
18
100
10
VDS (Volts)
Figure 8: Capacitance Characteristics
800
RDS(ON)
limited
100µs
1ms
DC
10ms
TJ(Max)=150°C
TC=25°C
0.1
100
10
600
400
100
1000
0
0.0001
VDS (Volts)
1
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
TJ(Max)=150°C
TC=25°C
200
0.01
1
Power (W)
10µs
1
ZθJC Normalized Transient
Thermal Resistance
1
1000
10
ID (Amps)
Ciss
1000
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1.2°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
0.000001
PD
Single Pulse
0.00001
0.0001
Ton
0.001
0.01
T
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev0: June 2010
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Page 4 of 6
AOD5N50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
6
5
90
Current rating ID(A)
Power Dissipation (W)
120
60
30
4
3
2
1
0
0
0
25
50
75
100
125
150
0
TCASE (°C)
Figure 12: Power De-rating (Note B)
25
50
75
100
125
150
TCASE (°C)
Figure 13: Current De-rating (Note B)
500
TJ(Max)=150°C
TA=25°C
Power (W)
400
300
200
100
0
0.001
ZθJA Normalized Transient
Thermal Resistance
10
1
0.01
0.1
1
10
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=55°C/W
100
1000
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
PD
Single Pulse
0.001
0.0001
0.0001
Ton
0.001
0.01
0.1
1
10
T
100
1000
10000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
Rev0: June 2010
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Page 5 of 6
AOD5N50
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+
VDC
-
VDC
DUT
Qgs
Vds
Qgd
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
Rg
+
VDC
90%
Vdd
-
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
BVDSS
AR
Vds
Id
+
Vgs
Vgs
VDC
Rg
-
Vdd
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev0: June 2010
Vgs
L
Isd
+
VDC
-
IF
trr
dI/dt
IRM
Vdd
Vdd
Vds
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Page 6 of 6