AOSMD AOWF14N50

AOW14N50/AOWF14N50
500V, 14A N-Channel MOSFET
General Description
Product Summary
VDS
The AOW14N50 & AOWF14N50 have been fabricated
using an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.By providing
low RDS(on), Ciss and Crss along with guaranteed avalanche
capability these parts can be adopted quickly into new
and existing offline power supply designs.
ID (at VGS=10V)
[email protected]
14A
RDS(ON) (at VGS=10V)
< 0.38Ω
100% UIS Tested
100% Rg Tested
TO-262
Top View
TO-262F
Bottom View
Top View
D
Bottom View
G
G
D
S
S
D
G
G
D
S
S
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
AOW14N50
Parameter
Symbol
VDS
500
Drain-Source Voltage
VGS
Gate-Source Voltage
±30
Continuous Drain
Current
TC=25°C
TC=100°C
Units
V
V
14*
14
ID
AOWF14N50
11
11*
A
Pulsed Drain Current C
IDM
Avalanche Current C
IAR
6
A
Repetitive avalanche energy C
EAR
540
mJ
Single plused avalanche energy G
Peak diode recovery dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
EAS
dv/dt
1080
5
mJ
V/ns
W
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,D
TJ, TSTG
56
PD
28
0.22
-55 to 150
W/ oC
°C
300
°C
TL
Symbol
RθJA
A
R
Maximum Case-to-sink
θCS
RθJC
Maximum Junction-to-Case
* Drain current limited by maximum junction temperature.
Rev2: July 2010
278
2.2
AOW14N50
65
AOWF14N50
65
Units
°C/W
0.5
0.45
-4.5
°C/W
°C/W
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Page 1 of 6
AOW14N50/AOWF14N50
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
ID=250µA, VGS=0V, TJ=25°C
500
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Zero Gate Voltage Drain Current
IDSS
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V, TJ=150°C
600
V
ID=250µA, VGS=0V
0.5
V/ oC
VDS=500V, VGS=0V
1
VDS=400V, TJ=125°C
10
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th)
Gate Threshold Voltage
VDS=5V ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
ISM
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
±100
4.2
4.5
nΑ
V
VGS=10V, ID=7A
0.29
0.38
Ω
VDS=40V, ID=7A
20
1
V
14
A
56
A
pF
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
µA
3.3
S
0.71
1531
1914
2297
134
191
250
pF
9.5
16
23
pF
VGS=0V, VDS=0V, f=1MHz
1.75
3.5
5.3
Ω
34
42.8
51
nC
VGS=10V, VDS=400V, ID=14A
7.4
9.3
11
nC
10
20.3
31
nC
44
53
ns
84
101
ns
92
110
ns
50
60
ns
ns
µC
VGS=0V, VDS=25V, f=1MHz
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=14A,dI/dt=100A/µs,VDS=100V
289
347
Qrr
Body Diode Reverse Recovery Charge IF=14A,dI/dt=100A/µs,VDS=100V
4.93
6
VGS=10V, VDS=250V, ID=14A,
RG=25Ω
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=6A, VDD=150V, RG=25Ω, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev2: July 2010
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Page 2 of 6
AOW14N50/AOWF14N50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
100
10V
20
10
6V
ID(A)
ID (A)
-55°C
VDS=40V
6.5V
25
15
10
125°C
VGS=5.5V
1
25°C
5
0
0
5
10
15
20
25
0.1
30
2
4
6
8
10
VGS(Volts)
Figure 2: Transfer Characteristics
0.5
3
0.5
2.5
Normalized On-Resistance
RDS(ON) (Ω)
VDS (Volts)
Fig 1: On-Region Characteristics
0.4
VGS=10V
0.4
0.3
0.3
VGS=10V
ID=7A
2
1.5
1
0.5
0.2
0
5
10
15
20
25
0
-100
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
-50
0
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.2
1.0E+02
1.1
1.0E+00
40
IS (A)
BVDSS (Normalized)
1.0E+01
1
125°C
1.0E-01
25°C
1.0E-02
1.0E-03
0.9
1.0E-04
0.8
-100
1.0E-05
-50
0
50
100
150
200
TJ (°C)
Figure 5:Break Down vs. Junction Temparature
Rev2: July 2010
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AOW14N50/AOWF14N50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10000
VDS=400V
ID=14A
Ciss
Capacitance (pF)
VGS (Volts)
12
9
6
1000
Coss
100
Crss
10
3
0
1
0
10
20
30
40
50
Qg (nC)
Figure 7: Gate-Charge Characteristics
60
0.1
10
VDS (Volts)
Figure 8: Capacitance Characteristics
100
100
100
10µs
10µs
RDS(ON)
limited
1ms
10ms
1
DC
0.1s
RDS(ON)
limited
10
100µs
ID (Amps)
10
ID (Amps)
1
100µs
1ms
1
10ms
DC
0.1
TJ(Max)=150°C
TC=25°C
0.1
TJ(Max)=150°C
TC=25°C
0.1s
1s
10s
0.01
0.01
1
10
100
1000
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area for AOW14N50 (Note F)
1
10
100
1000
VDS (Volts)
Figure 10: Maximum Forward Biased Safe
Operating Area for AOWF14N50 (Note F)
18
Current rating ID(A)
15
12
9
6
3
0
0
75
100
125
TCASE (°C)
Figure 11: Current De-rating (Note B)
Rev2: July 2010
25
50
150
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Page 4 of 6
AOW14N50/AOWF14N50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.45°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
Single Pulse
0.01
Ton
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance for AOW14N50 (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=4.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Ton
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOWF14N50 (Note F)
Rev2: July 2010
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Page 5 of 6
AOW14N50/AOWF14N50
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+
VDC
-
VDC
DUT
Qgs
Vds
Qgd
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
Rg
+
VDC
90%
Vdd
-
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
BVDSS
AR
Vds
Id
+
Vgs
Vgs
VDC
Rg
-
Vdd
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev2: July 2010
Vgs
L
Isd
+
VDC
-
IF
trr
dI/dt
IRM
Vdd
Vdd
Vds
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Page 6 of 6