AON4805L Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AON4805L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltage as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. VDS (V) = -20V ID = -4.5A (VGS = -4.5V) RDS(ON) < 65mΩ (VGS = -4.5V) RDS(ON) < 85mΩ (VGS = -2.5V) RDS(ON) < 115mΩ (VGS = -1.8V) -RoHS Compliant -Halogen Free DFN 3x2 Top View Pin 1 D2 D1 Bottom View S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 G2 G1 S2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage V Gate-Source Voltage GS TA=25°C Continuous Drain Current Pulsed Drain Current TA=70°C Junction and Storage Temperature Range t ≤ 10s Steady-State Steady-State Alpha & Omega Semiconductor, Ltd. A 2 W 1.3 TJ, TSTG Symbol AD V -25 PD TA=70°C A ±8 -3.5 ID IDM C Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead Units V -4.5 TA=25°C Power Dissipation B MOSFET -20 RθJA RθJL -55 to 150 Typ 50 84 28 °C Max 60 100 34 Units °C/W °C/W °C/W www.aosmd.com AON4805L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -20 -1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±8V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -0.5 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -25 TJ=55°C -1 V 53 65 72 90 VGS=-2.5V, ID=-3A 66 85 mΩ VGS=-1.8V, ID=-2A 88 115 mΩ VDS=-5V, ID=-4.5A 15 TJ=125°C VSD Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge µA -0.67 Forward Transconductance Coss -5 nA gFS IS Units ±100 VGS=-4.5V, ID=-4.5A Static Drain-Source On-Resistance Max V VDS=-20V, VGS=0V IDSS RDS(ON) Typ A -0.7 560 VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-4.5V, VDS=-10V, ID=-4.5A mΩ S -1 V -1.7 A 670 pF 80 pF 70 pF 15 23 Ω 8.5 10 nC 1.2 nC Qgd Gate Drain Charge 2.1 nC tD(on) Turn-On DelayTime 7.2 ns tr Turn-On Rise Time 36 ns tD(off) Turn-Off DelayTime 53 ns tf Turn-Off Fall Time 56 ns trr Body Diode Reverse Recovery Time IF=-4.5A, dI/dt=100A/µs 37 Qrr Body Diode Reverse Recovery Charge IF=-4.5A, dI/dt=100A/µs 27 VGS=-4.5V, VDS=-10V, RL=2.2Ω, RGEN=6Ω 45 ns nC 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on T J(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C: Ratings are based on low frequency and duty cycles to keep initialT J=25°C. D. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.12 2 F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating. Rev0 : July 2008 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON4805L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 20 VDS=-5V -3.0V -4.5V -2.5V 20 15 -ID(A) -ID (A) 15 -2.0V 10 10 5 VGS=-1.5V 5 125°C 25°C 0 0 0 1 2 3 4 5 0 0.5 -VDS (Volts) Figure 1: On-Region Characteristics(Note E) 1 1.5 2 2.5 3 -VGS(Volts) Figure 2: Transfer Characteristics(Note E) 1.6 VGS=-4.5V ID=-4.5A RDS(ON) (mΩ) 120 Normalized On-Resistance 140 VGS=-1.8V 100 VGS=-2.5V 80 VGS=-4.5V 60 40 1.4 VGS=-2.5V ID=-3A 1.2 VGS=-1.8V ID=-2A 1 0.8 0 2 4 6 8 10 0 25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage(Note E) 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature(Note E) 1E+02 180 ID=-4.5A 160 1E+01 12 140 1E+00 120 -IS (A) RDS(ON) (mΩ) 50 100 125°C 125°C 1E-01 25°C 1E-02 80 1E-03 60 1E-04 25°C 40 0 2 4 6 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage(Note E) Alpha & Omega Semiconductor, Ltd. 8 1E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics(Note E) www.aosmd.com AON4805L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 1200 1000 Capacitance (pF) 4 -VGS (Volts) 1400 VDS=-10V ID=-4.5A 3 2 800 Ciss 600 400 1 Coss 200 0 Crss 0 0 2 4 6 8 10 0 Qg (nC) Figure 7: Gate-Charge Characteristics 10µs RDS(ON) limited 100µ 0.10 DC TJ(Max)=150°C TA=25°C 1ms 10ms 0.1s 1s 1 10 100 0.1 0.00001 1 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=110°C/W TJ(Max)=150°C TA=25°C 10 -VDS (Volts) 10 20 1 0.01 0.1 15 100 Power (W) -ID (Amps) 1000 1.00 ZθJA Normalized Transient Thermal Resistance 10 -VDS (Volts) Figure 8: Capacitance Characteristics 100.00 10.00 5 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 12 0.1 PD 0.01 Ton Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON4805L Gate Charge Test Circuit & Waveform Vgs Qg - + VDC Qgs Vds Qgd + DUT - VDC -10V Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds t off t on Vgs VDC - DUT Vgs Rg td(on) t d(off) tr tf 90% Vdd + Vgs 10% Vds Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs L Vgs Ig Alpha & Omega Semiconductor, Ltd. -Isd + Vdd VDC - -I F t rr dI/dt -I RM Vdd -Vds www.aosmd.com