AOSMD AO8807

万和兴电子有限公司 www.whxpcb.com
AO8807
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO8807 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch. AO8807
and AO8807L are electrically identical.
VDS (V) = -12V
ID = -6.5 A (VGS = -4.5V)
RDS(ON) < 20mΩ (VGS = -4.5V)
RDS(ON) < 24mΩ (VGS = -2.5V)
RDS(ON) < 30mΩ (VGS = -1.8V)
- RoHS Compliant
-Halogen Free
ESD Protected!
D1
D2
TSSOP-8
Top View
D1
S1
S1
G1
1
2
3
4
8
7
6
5
D2
S2
S2
G2
Rg
Rg
G1
G2
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TA=25°C
Continuous Drain
Current
Pulsed Drain Current
ID
IDM
TA=70°C
C
Junction and Storage Temperature Range
Alpha & Omega Semiconductor, Ltd.
Units
V
±8
V
-60
1.4
W
0.9
TJ, TSTG
°C
-55 to 150
Symbol
t ≤ 10s
Steady-State
Steady-State
A
-5
PD
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient AD
Maximum Junction-to-Lead
Maximum
-12
-6.5
TA=25°C
Power Dissipation B
S2
RθJA
RθJL
Typ
73
96
63
Max
90
125
75
Units
°C/W
°C/W
°C/W
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AO8807
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Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-12
-1
TJ=55°C
-5
IGSS
Gate-Body leakage current
VDS=0V, VGS=±8V
Gate Threshold Voltage
VDS=VGS ID=-250µA
-0.35
ID(ON)
On state drain current
VGS=-4.5V, VDS=-5V
-60
±10
VGS=-4.5V, ID=-6.5A
TJ=125°C
Static Drain-Source On-Resistance
VGS=-2.5V, ID=-6A
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
Qgd
Turn-On Delay Time
tr
Turn-On Rise Time
16
20
23
28
19
24
mΩ
mΩ
30
36
mΩ
VDS=-5V, ID=-6.5A
45
-0.56
1740
VGS=0V, VDS=-6V, f=1MHz
S
-1
V
-1.4
A
2100
pF
334
pF
200
pF
kΩ
VGS=0V, VDS=0V, f=1MHz
1.3
1.7
19
23
VGS=-4.5V, VDS=-6V, ID=-6.5A
4.5
nC
5.3
nC
240
ns
580
7
ns
µs
4.2
µs
Gate Drain Charge
tD(on)
A
28
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Rg
-0.85
23
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
Crss
µA
VGS=-1.5V, ID=-5A
VSD
Output Capacitance
-0.53
µA
VGS=-1.8V, ID=-5.5A
Forward Transconductance
Coss
Units
mΩ
gFS
IS
Max
V
VDS=-12V, VGS=0V
VGS(th)
RDS(ON)
Typ
VGS=-4.5V, VDS=-6V, RL=0.9Ω,
RGEN=3Ω
tD(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=-6.5A, dI/dt=100A/µs
22
Qrr
Body Diode Reverse Recovery Charge IF=-6.5A, dI/dt=100A/µs
17
27
nC
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value
in any given application depends on the user's specific board design.
B. The power dissipation PD is based on T J(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in 2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating.
Rev1 :April 2010
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO8807
万和兴电子有限公司 www.whxpcb.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
60
-4.5V
50
VDS=-5V
-2.5V
50
-3V
40
-2V
-ID(A)
-ID (A)
40
30
30
20
20
VGS=-1.5V
10
125°C
10
0
25°C
0
0
1
2
3
4
5
0
45
1
1.5
2
2.5
3
1.6
Normalized On-Resistance
40
VGS=-1.5V
35
RDS(ON) (mΩ)
0.5
-VGS(Volts)
Figure 2: Transfer Characteristics(Note E)
-VDS (Volts)
Figure 1: On-Region Characteristics(Note E)
VGS=-2.5V
30
VGS=-1.8V
25
20
15
ID=-6A, VGS=-2.5V
1.4
ID=-6.5A, VGS=-4.5V
1.2
ID=-5A, VGS=-1.5V
ID=-5.5A, VGS=-1.8V
1.0
VGS=-4.5V
10
0.8
0
2
4
6
8
10
12
14
16
18
20
0
25
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage(Note E)
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature(Note E)
1E+01
50
ID=-6.5A
45
1E+00
125°C
40
1E-01
35
30
-IS (A)
RDS(ON) (mΩ)
50
125°C
25
25°C
1E-02
1E-03
20
1E-04
15
25°C
1E-05
10
0
2
4
6
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source
Voltage(Note E)
Alpha & Omega Semiconductor, Ltd.
8
0.0
0.2
0.4
0.6
0.8
1.0
-VSD (Volts)
Figure 6: Body-Diode Characteristics(Note E)
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AO8807
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2800
4.5
VDS=-6V
ID=-6.5A
4
2400
Capacitance (pF)
3.5
-VGS (Volts)
3
2.5
2
1.5
1
1600
1200
800
0.5
400
0
0
0
4
8
12
16
Ciss
2000
20
Coss
Crss
0
-Qg (nC)
Figure 7: Gate-Charge Characteristics
2
4
6
100
12
TJ(Max)=150°C
TA=25°C
60
RDS(ON)
limited
100µs
1ms
1
10s
0.1s
Power (W)
ID (Amps)
10
80
10µs
10
8
-VDS (Volts)
Figure 8: Capacitance Characteristics
20
1s
0
DC
TJ(Max)=150°C
TA=25°C
0
0.01
40
0
0.0001
0.1
1
10
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
ZθJA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=125°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO8807
万和兴电子有限公司 www.whxpcb.com
Gate Charge Test Circuit & Waveform
Vgs
Qg
-
+
VDC
Qgs
Vds
Qgd
+
DUT
-
VDC
-10V
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
Vgs
VDC
90%
-
DUT
Vdd
+
Rg
Vgs
10%
Vgs
td(on)
tr
t d(off)
ton
tf
t off
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
L
Vgs
Ig
Alpha & Omega Semiconductor, Ltd.
-Isd
+ Vdd
VDC
-
-I F
t rr
dI/dt
-I RM
Vdd
-Vds
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