A-POWER AP2311GK-HF

AP2311GK-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Lower Gate Charge
S
▼ Fast Switching Characteristic
D
▼ RoHS Compliant & Halogen-Free
SOT-223
BVDSS
-60V
RDS(ON)
250mΩ
ID
- 2.4A
G
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, low on-resistance and costeffectiveness.
The SOT-223 package is designed for suface mount application, larger
heatsink than SO-8 and SOT package.
D
G
S
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=70℃
Rating
Units
- 60
V
+20
V
Continuous Drain Current
3
- 2.4
A
Continuous Drain Current
3
-2
A
-10
A
2.78
W
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
45
℃/W
1
201109091
AP2311GK-HF
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=-250uA
-60
-
-
V
VGS=-10V, ID=-1.8A
-
-
250
mΩ
VGS=-4.5V, ID=-1.4A
-
-
300
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-1A
-
2
-
S
IDSS
Drain-Source Leakage Current
VDS=-48V, VGS=0V
-
-
-25
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=-1A
-
6
-
nC
Qgs
Gate-Source Charge
VDS=-48V
-
1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
3
-
nC
td(on)
Turn-on Delay Time
VDS=-30V
-
8
-
ns
tr
Rise Time
ID=-1A
-
5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
22
-
ns
tf
Fall Time
VGS=-10V
-
3
-
ns
Ciss
Input Capacitance
VGS=0V
-
510
-
pF
Coss
Output Capacitance
VDS=-25V
-
50
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
40
-
pF
Min.
Typ.
IS=-1.2A, VGS=0V
-
-
-1.2
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=-1A, VGS=0V,
-
30
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
38
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 120 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2311GK-HF
10
10
o
T A =25 C
8
-ID , Drain Current (A)
-ID , Drain Current (A)
8
6
V G = - 3.0V
4
6
V G = - 3.0V
4
2
2
0
0
0
1
2
3
4
5
6
0
-V DS , Drain-to-Source Voltage (V)
1
2
3
4
5
6
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.2
250
I D = -1.8 A
V G =-10V
I D = -1.4 A
T A =25 o C
Normalized RDS(ON)
240
RDS(ON) (mΩ )
- 10V
- 7.0V
- 5.0V
- 4.5V
o
T A =150 C
- 10V
- 7.0V
- 5.0V
- 4.5V
230
220
1.8
1.4
20
1.0
210
200
0.6
2
4
6
8
10
-50
Fig 3. On-Resistance v.s. Gate Voltage
50
100
150
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
Normalized VGS(th) (V)
1.6
1.5
-IS (A)
0
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
1
T j =150 o C
T j =25 o C
0.5
1.2
0.8
0.4
0
0.0
0
0.4
0.8
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP2311GK-HF
f=1.0MHz
610
I D =-1A
V DS =-48V
C iss
490
8
C (pF)
-VGS , Gate to Source Voltage (V)
10
6
370
4
250
2
130
C oss
C rss
10
0
0
4
8
1
12
5
9
Fig 7. Gate Charge Characteristics
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
10
100us
Operation in this area
limited by RDS(ON)
1ms
1
10ms
100ms
0.1
1s
T A =25 o C
Single Pulse
Normalized Thermal Response (R thja)
100
-ID (A)
13
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
t
0.01
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 120℃
℃ /W
DC
0.01
0.001
0.1
1
10
100
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
2.5
VG
-ID , Drain Current (A)
2
QG
-4.5V
1.5
QGS
QGD
1
0.5
Charge
Q
0
25
50
75
100
125
150
T A , Ambient Temperature ( o C )
Fig 11. Maximum Continuous Drain Current
v.s. Ambient Temperature
Fig 12. Gate Charge Waveform
4