A-POWER AP2311GN-HF

AP2311GN-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Small Package Outline
BVDSS
-60V
RDS(ON)
250mΩ
ID
▼ Surface Mount Device
- 1.8A
S
▼ RoHS Compliant
SOT-23
G
Description
D
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
G
S
The SOT-23 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=70℃
Rating
Units
- 60
V
+20
V
3
- 1.8
A
3
- 1.4
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
-10
A
[email protected]=25℃
Total Power Dissipation
1.38
W
Linear Derating Factor
0.01
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
90
℃/W
1
200811263
AP2311GN-HF
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
-60
-
-
V
-
-0.04
-
V/℃
VGS=-10V, ID=-1.8A
-
200
250
mΩ
VGS=-4.5V, ID=-1.4A
-
240
300
mΩ
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=0V, ID=-250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-1A
-
2
-
S
IDSS
Drain-Source Leakage Current
VDS=-60V, VGS=0V
-
-
-10
uA
Drain-Source Leakage Current (Tj=70 C) VDS=-48V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=+20V
-
-
+100
nA
ID=-1A
-
6
10
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-48V
-
1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
3
-
nC
VDS=-30V
-
8
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
22
-
ns
tf
Fall Time
RD=30Ω
-
3
-
ns
Ciss
Input Capacitance
VGS=0V
-
510
810
pF
Coss
Output Capacitance
VDS=-25V
-
50
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
40
-
pF
Rg
Gate Resistance
f=1.0MHz
-
6.4
9.6
Ω
Min.
Typ.
IS=-1.2A, VGS=0V
-
-
-1.2
V
IS=-1A, VGS=0V,
-
30
-
ns
dI/dt=100A/µs
-
38
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 270 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2311GN-HF
10
10
-10V
-7.0V
-5.0V
-4.5V
-ID , Drain Current (A)
T A =25 C
7.5
V G = -3.0V
5
8
5
V G = - 3 .0V
3
2.5
0
0
0
1
2
3
4
5
0
6
-V DS , Drain-to-Source Voltage (V)
1
2
3
4
5
6
7
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
250
I D =-1.4A
I D =-1.8A
V G =-10V
T A =25 o C
240
Normalized RDS(ON)
1.6
RDS(ON) (mΩ )
-10V
-7.0V
-5.0V
-4.5V
T A = 150 o C
-ID , Drain Current (A)
o
230
220
1.2
0.8
210
0.4
200
2
4
6
8
-50
10
Fig 3. On-Resistance v.s. Gate Voltage
50
100
150
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
1.5
Normalized -VGS(th) (V)
1.5
o
o
T j =25 C
T j =150 C
-IS(A)
0
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
1.0
0.5
1.3
1.0
0.8
0.0
0.5
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
3
AP2311GN-HF
f=1.0MHz
1000
I D = -1 A
V DS = - 48 V
10
C iss
8
C (pF)
-VGS , Gate to Source Voltage (V)
12
6
100
C oss
4
C rss
2
0
10
0
2
4
6
8
10
12
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (Rthja)
Duty factor=0.5
10
-ID (A)
100us
1
1ms
0.1
10ms
100ms
1s
DC
0.01
o
T A =25 C
Single Pulse
0.2
0.1
0.1
0.05
PDM
t
0.01
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Single Pulse
Rthja = 270℃/W
0.001
0.001
0.1
1
10
100
1000
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
10
VG
V DS =-5V
-ID , Drain Current (A)
8
T j =25 o C
QG
T j =150 o C
-4.5V
6
QGS
QGD
4
2
Charge
Q
0
0
1
2
3
4
5
6
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Circuit
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : SOT-23
D
Millimeters
SYMBOLS
D1
E1
E
e
MIN
NOM
MAX
A
1.00
1.15
1.30
A1
0.00
--
0.10
A2
0.10
0.15
0.25
D1
0.30
0.40
0.50
e
1.70
2.00
2.30
D
2.70
2.90
3.10
E
2.40
2.65
3.00
E1
1.40
1.50
1.60
1.All Dimension Are In Millimeters.
A
2.Dimension Does Not Include Mold Protrusions.
A2
A1
Part Marking Information & Packing : SOT-23
Laser Marking
Part Number : NG
If second letter has underline : HF & Rohs product
If second letter has not underline : Rohs product
NGSS
Date Code :
SS:2004,2008,2012…
SS:2003,2007,2011…
SS:2002,2006,2010…
SS:2001,2005,2009…
"A~Z" showed on 3rd position --> week 1 ~ week 26,
"A~Z" showed on 4th position --> week 27 ~ week 52.
5