A-POWER AP60T03AS

AP60T03AS/P
Advanced Power
Electronics Corp.
▼ Simple Drive Requirement
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
▼ Low Gate Charge
▼ Fast Switching
BVDSS
30V
RDS(ON)
12mΩ
ID
G
45A
S
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
TO-263(S)
The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP60T03AP) are available for low-profile applications.
TO-220(P)
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
± 20
V
[email protected]=25℃
Continuous Drain Current, VGS @ 10V
45
A
[email protected]=100℃
Continuous Drain Current, VGS @ 10V
32
A
120
A
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
44
W
Linear Derating Factor
0.352
W/℃
TSTG
Storage Temperature Range
-55 to 175
℃
TJ
Operating Junction Temperature Range
-55 to 175
℃
Thermal Data
Symbol
Parameter
Value
Unit
Rthj-c
Thermal Resistance Junction-case
Max.
3.4
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
62
℃/W
Data and specifications subject to change without notice
200909032
AP60T03AS/P
Electrical [email protected] j=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
30
-
-
V
-
0.026
-
V/℃
VGS=10V, ID=20A
-
-
12
mΩ
VGS=4.5V, ID=15A
-
-
25
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VDS=10V, ID=10A
-
25
-
S
VDS=30V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=175 C)
VDS=24V ,VGS=0V
-
-
250
uA
Gate-Source Leakage
VGS= ± 20V
-
-
±100
nA
ID=20A
-
11.6
-
nC
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
VGS(th)
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
gfs
2
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
2
VGS=0V, ID=250uA
2
Max. Units
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=24V
-
3.9
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
7
-
nC
VDS=15V
-
8.8
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=20A
-
57.5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
18.5
-
ns
tf
Fall Time
RD=0.75Ω
-
6.4
-
ns
Ciss
Input Capacitance
VGS=0V
-
1135
-
pF
Coss
Output Capacitance
VDS=25V
-
200
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
135
-
pF
Min.
Typ.
IS=45A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=20A, VGS=0V,
-
23.3
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
16
-
nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
AP60T03AS/P
125
90
10V
8.0V
ID , Drain Current (A)
6.0V
75
5.0V
50
25
6.0V
60
5.0V
30
V GS =4.0V
V GS =4.0V
0
0
0.0
1.0
2.0
3.0
0.0
4.0
1.0
V DS , Drain-to-Source Voltage (V)
2.0
3.0
4.0
5.0
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2
80
I D =20A
V GS =10V
I D =20A
T C =25 ℃
1.6
Normalized RDS(ON)
60
40
20
1.2
0.8
0
0.4
3
5
7
9
11
-50
25
100
175
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.8
100
2.3
10
1.8
Tj=25 o C
VGS(th) (V)
Tj=175 o C
IS(A)
RDS(ON) (mΩ )
10V
8.0V
T C =175 o C
ID , Drain Current (A)
T C =25 o C
100
1.3
1
0.8
0.1
0.3
0
0.5
1
V SD (V) , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.5
-50
25
100
T j , Junction Temperature (
175
o
C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
AP60T03AS/P
f=1.0MHz
10000
12
VGS , Gate to Source Voltage (V)
I D =20A
V DS =16V
V DS =20V
V DS =24V
Ciss
1000
C (pF)
9
6
Coss
Crss
100
3
0
0
6
12
18
10
24
1
Q G , Total Gate Charge (nC)
8
15
22
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
ID (A)
100
100us
1ms
10
10ms
100ms
DC
T C =25 o C
Single Pulse
Normalized Thermal Response (Rthjc)
1000
Duty Factor = 0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
T
Single Pulse
Duty Factor = t/T
Peak Tj = PDM x Rthjc + T C
0.01
1
0.1
1
10
100
0.00001
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.01
0.1
Fig 10. Effective Transient Thermal Impedance
RD
VDS
D
RG
+
VDS
0.8 x RATED VDS
G
S
S
10V
VGS
-
TO THE
OSCILLOSCOPE
D
TO THE
OSCILLOSCOPE
0.5 x RATED VDS
G
VGS
+
1~ 3 mA
IG
Fig 11. Switching Time Circuit
1
t , Pulse Width (s)
ID
Fig 12. Gate Charge Circuit