A-POWER AP70T03GJ

AP70T03GH/J
Pb Free Plating Product
Advanced Power
Electronics Corp.
▼ Simple Drive Requirement
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
▼ Low Gate Charge
▼ Fast Switching
30V
RDS(ON)
9mΩ
ID
G
▼ RoHS Compliant
BVDSS
60A
S
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
GD
The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP70T03GJ) are available for low-profile applications.
G
D
S
TO-252(H)
S
TO-251(J)
Rating
Units
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
±20
V
[email protected]=25℃
Continuous Drain Current, VGS @ 10V
60
A
[email protected]=100℃
Continuous Drain Current, VGS @ 10V
43
A
195
A
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
53
W
Linear Derating Factor
0.36
W/℃
TSTG
Storage Temperature Range
-55 to 175
℃
TJ
Operating Junction Temperature Range
-55 to 175
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
2.8
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
℃/W
Data and specifications subject to change without notice
200823053-1/4
AP70T0G3H/J
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Typ.
Max. Units
30
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.03
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=33A
-
-
9
mΩ
VGS=4.5V, ID=20A
-
-
18
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VDS=10V, ID=33A
-
35
-
S
VDS=30V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (T j=175 C)
VDS=24V ,VGS=0V
-
-
250
uA
Gate-Source Leakage
VGS= ±20V
-
-
±100
nA
ID=33A
-
17
27
nC
VGS(th)
Gate Threshold Voltage
gfs
o
IDSS
Drain-Source Leakage Current (T j=25 C)
o
IGSS
2
VGS=0V, ID=250uA
Min.
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=20V
-
5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
10
-
nC
Qoss
Output Charge
VDD=15V,VGS=0V
-
13.5
22
nC
VDS=15V
-
8
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=33A
-
105
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
22
-
ns
tf
Fall Time
RD=0.45Ω
-
9
-
ns
Ciss
Input Capacitance
VGS=0V
-
1485 2400
pF
Coss
Output Capacitance
VDS=25V
-
245
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
170
-
pF
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=33A, VGS=0V
-
-
1.3
V
trr
Reverse Recovery Time
IS=20A, VGS=0V,
-
27
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
20
-
nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
2/4
AP70T03GH/J
120
200
o
T C =25 C
90
ID , Drain Current (A)
150
ID , Drain Current (A)
10V
8.0V
6.0V
T C =175 o C
10V
8.0V
6.0V
100
V G =4.0V
50
60
V G =4.0V
30
0
0
0.0
1.5
3.0
0.0
4.5
V DS , Drain-to-Source Voltage (V)
1.5
3.0
4.5
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
60
2
I D =20A
T C =25 ℃
I D =33A
V G =10V
1.6
Normalized RDS(ON)
RDS(ON) (mΩ )
40
20
1.2
0.8
0.4
0
0
4
8
12
-50
16
Fig 3. On-Resistance v.s. Gate Voltage
2
VGS(th) (V)
100
IS(A)
2.5
T j =175 o C
100
175
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1000
10
25
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
T j =25 o C
1.5
1
1
0.1
0.5
0
0.5
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.5
-50
25
100
175
o
T j , Junction Temperature ( C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP70T03GH/J
12
f=1.0MHz
10000
9
V DS =16V
V DS =20V
V DS =24V
C (pF)
VGS , Gate to Source Voltage (V)
I D =33A
6
C iss
1000
3
C oss
C rss
0
100
0
5
10
15
20
25
30
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
Normalized Thermal Response (Rthjc)
1
10us
100
ID (A)
100us
1ms
10
10ms
100ms
DC
o
T C =25 C
Single Pulse
Duty factor = 0.5
0.2
0.1
0.1
0.05
0.02
PDM
t
0.01
T
Single Pulse
Duty Factor = t/T
Peak Tj = PDM x Rthjc + T C
1
0.01
0.1
1
10
100
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig10. Effective Transient Thermal Impedance
VG
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) t
f
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4/4