A-POWER AP4407F

AP4407F/I
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower On-resistance
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
BVDSS
-30V
RDS(ON)
14mΩ
ID
G
-50A
S
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
The TO-220 isolation package is universally preferred for all commercialindustrial applications and suited for low voltage applications such as
DC/DC converters and high current ,high speed
switching circuits.
Absolute Maximum Ratings
Symbol
Parameter
G
D
D
S
TO-220FM(F)
S
TO-220CFM(I)
Rating
Units
VDS
Drain-Source Voltage
-30
V
VGS
Gate-Source Voltage
±25
V
[email protected]=25℃
Continuous Drain Current, VGS @ 10V
-50
A
[email protected]=100℃
Continuous Drain Current, VGS @ 10V
-32
A
1
IDM
Pulsed Drain Current
180
A
[email protected]=25℃
Total Power Dissipation
33.6
W
Linear Derating Factor
0.27
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
3.72
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
65
℃/W
Data and specifications subject to change without notice
200305041
AP4407F/I
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
-30
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
-
-0.01
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-10V, ID=-24A
-
-
14
mΩ
VGS=-4.5V, ID=-16A
-
-
23
mΩ
VDS=VGS, ID=-250uA
-1
-
-3
V
VDS=-10V, ID=-24A
-
36
-
S
VDS=-30V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=-24V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS= ±25V
-
-
±100
nA
ID=-24A
-
35
60
nC
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
2
VGS=0V, ID=-250uA
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-24V
-
5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
26
-
nC
VDS=-15V
-
11
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-24A
-
64
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
63
-
ns
tf
Fall Time
RD=0.63Ω
-
100
-
ns
Ciss
Input Capacitance
VGS=0V
-
2120 3390
pF
Coss
Output Capacitance
VDS=-25V
-
630
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
550
-
pF
Min.
Typ.
IS=-24A, VGS=0V
-
-
-1.2
V
IS=-24A, VGS=0V,
-
39
-
ns
dI/dt=-100A/µs
-
38
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
Test Conditions
Max. Units
AP4407F/I
250
150
-10V
-8.0V
T C =25 o C
-10V
-8.0V
-6.0V
T C =150 o C
150
-ID , Drain Current (A)
-ID , Drain Current (A)
200
-6.0V
100
-4.5V
100
-4.5V
50
50
V G =-3.0V
V G =-3.0V
0
0
0
1
2
3
4
5
6
7
8
0
1
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
3
4
5
6
7
8
Fig 2. Typical Output Characteristics
25
1.8
I D = -16 A
T C =25 ℃
I D =-24A
V G =-10V
Normalized R DS(ON)
1.6
20
RDS(ON) (mΩ )
2
-V DS , Drain-to-Source Voltage (V)
15
1.4
1.2
1.0
0.8
0.6
10
3
5
7
9
-50
11
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
30
3.0
2.5
-IS(A)
T j =150 o C
-VGS(th) (V)
20
T j =25 o C
2.0
1.5
10
1.0
0
0.5
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
AP4407F/I
f=1.0MHz
14
10000
I D = - 24 A
V DS = -24V
-VGS , Gate to Source Voltage (V)
12
10
C iss
C (pF)
8
1000
6
C oss
C rss
4
2
100
0
0
20
40
60
1
80
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
1000
-ID (A)
100
100us
1ms
10
10ms
100ms
o
T C =25 C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
Single Pulse
DC
1
0.01
0.1
1
10
100
0.00001
0.0001
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
90%
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Fig 12. Gate Charge Waveform
Q