A-POWER AP75T10P

AP75T10S/P
Advanced Power
Electronics Corp.
▼ Simple Drive Requirement
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
▼ Lower On-resistance
▼ Fast Switching Characteristic
BVDSS
100V
RDS(ON)
15mΩ
ID
G
72A
S
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G D
S
TO-263(S)
The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP75T10P) are available for low-profile applications.
G
Absolute Maximum Ratings
Parameter
Symbol
D
TO-220(P)
S
Rating
Units
VDS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage
±20
V
[email protected]=25℃
Continuous Drain Current, VGS @ 10V
72
A
[email protected]=100℃
Continuous Drain Current, VGS @ 10V
45
A
260
A
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
138
W
Linear Derating Factor
1.11
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
0.9
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
62
℃/W
AP75T10S/P
Electrical [email protected] j=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
100
-
-
V
-
0.09
-
V/℃
VGS=10V, ID=30A
-
-
15
mΩ
VGS=4.5V, ID=16A
-
-
21
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VDS=10V, ID=30A
-
52
-
S
VDS=100V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=80V ,VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS= ±20V
-
-
±100
nA
ID=30A
-
69
110.4
nC
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
o
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
2
VGS=0V, ID=1mA
2
Max. Units
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=80V
-
12
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
39
-
nC
VDS=50V
-
12
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=30A
-
75
-
ns
td(off)
Turn-off Delay Time
RG=10Ω,VGS=10V
-
220
-
ns
tf
Fall Time
RD=1.6Ω
-
250
-
ns
Ciss
Input Capacitance
VGS=0V
-
5690
9100
pF
Coss
Output Capacitance
VDS=25V
-
540
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
605
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.1
-
Ω
Min.
Typ.
IS=30A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=30A, VGS=0V
-
51
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
74
-
nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
AP75T10S/P
120
250
10V
6.0 V
5.0V
4.5V
ID , Drain Current (A)
200
150
100
V G =3.0V
10V
6.0V
5.0V
4.5V
V G =3.0V
T C = 150 o C
100
ID , Drain Current (A)
o
T C = 25 C
80
60
40
50
20
0
0
0
2
4
6
0
8
1
2
3
4
5
6
7
8
9
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
17
2.0
I D =16A
16
I D =30A
V G =10V
1.8
o
T C =25 C
Normalized R DS(ON)
RDS(ON) (mΩ )
1.6
15
14
13
1.4
1.2
1.0
0.8
12
0.6
0.4
11
3
5
7
9
-50
11
0
50
100
150
o
V GS Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
45
Normalized VGS(th) (V)
1.5
IS(A)
30
T j =150 o C
T j =25 o C
15
1
0.5
0
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
AP75T10S/P
f=1.0MHz
10000
I D = 30 A
C iss
10
V DS = 50 V
V DS = 64 V
V DS = 80 V
8
C (pF)
VGS , Gate to Source Voltage (V)
12
6
1000
C oss
C rss
4
2
0
100
0
20
40
60
80
100
120
140
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
1000
ID (A)
100
1ms
10
10ms
T c =25 o C
Single Pulse
100ms
DC
1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
Single Pulse
0.01
0.1
1
10
100
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Fig 12. Gate Charge Waveform
Q