A-POWER AP98T03GPS-HF

AP98T03GP/S-HF
RoHS-compliant Product
Advanced Power
Electronics Corp.
▼ Simple Drive Requirement
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
▼ Ultra-low On-resistance
▼ Fast Switching Characteristic
BVDSS
30V
RDS(ON)
2.8mΩ
ID
G
200A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
G
D
The TO-263 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters. The through-hole version (AP98T03GP) are
available for low-profile applications.
TO-220(P)
S
G
D
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
3
S
TO-263(S)
Rating
Units
30
V
+20
V
[email protected]=25℃
Continuous Drain Current, VGS @ 10V
200
A
[email protected]=100℃
Continuous Drain Current, VGS @ 10V
125
A
800
A
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
156
W
Linear Derating Factor
1.25
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Parameter
Maximum Thermal Resistance, Junction-case
4
Value
Units
0.8
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
40
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
℃/W
Data and specifications subject to change without notice
1
201208174
AP98T03GP/S-HF
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
30
-
-
V
VGS=10V, ID=40A
-
-
2.8
mΩ
VGS=4.5V, ID=30A
-
-
4
mΩ
0.8
-
2.5
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=10V, ID=30A
-
75
-
S
IDSS
Drain-Source Leakage Current
VDS=30V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=30A
-
71
115
nC
Qgs
Gate-Source Charge
VDS=24V
-
9
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
41
-
nC
td(on)
Turn-on Delay Time
VDS=15V
-
14
-
ns
tr
Rise Time
ID=30A
-
78
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
74
-
ns
tf
Fall Time
VGS=10V
-
136
-
ns
Ciss
Input Capacitance
VGS=0V
-
4960 7940
pF
Coss
Output Capacitance
VDS=25V
-
1210
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
1200
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1
2
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=40A, VGS=0V
-
-
1.3
V
trr
Reverse Recovery Time
IS=10A, VGS=0V
-
54
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
74
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 80A, calculated continuous current
based on maximum allowable junction temperature is 200A.
4.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP98T03GP/S-HF
300
150
10 V
7.0 V
5.0 V
4.5 V
ID , Drain Current (A)
250
10V
7.0V
5.0V
4.5V
V G = 3.0 V
T C = 1 50 o C
120
ID , Drain Current (A)
o
T C = 25 C
200
150
V G = 3.0 V
100
90
60
30
50
0
0
0
1
2
3
4
0
5
1
2
3
4
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
3.2
I D =30A
I D =40A
V G =10V
T C =25 o C
3
Normalized RDS(ON)
RDS(ON) (mΩ)
1.6
2.8
2.6
1.2
0.8
2.4
2.2
0.4
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
40
1.6
30
1.2
Normalized VGS(th)
T j =25 o C
IS(A)
T j =150 o C
20
10
0.8
0.4
0
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP98T03GP/S-HF
f=1.0MHz
12
8000
V DS = 15 V
V DS = 18 V
V DS = 24 V
8
6000
C iss
C (pF)
VGS , Gate to Source Voltage (V)
I D = 30 A
10
6
4000
4
2000
C oss
C rss
2
0
0
0
20
40
60
80
100
120
140
160
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
100
Normalized Thermal Response (Rthjc)
1
ID (A)
100us
1ms
10ms
100ms
DC
10
T C =25 o C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
1
0.1
1
10
100
0.00001
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4