AP3310GH,J-HF (AP0251B) - Advanced Power Electronics Corp

AP3310GH/J-HF
RoHS-compliant Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ 2.5V Gate Drive Capability
BVDSS
-20V
RDS(ON)
150mΩ
ID
▼ Fast Switching Characteristic
G
-10A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, low on-resistance and cost-effectiveness.
G
D
S
TO-252(H)
This device is suited for low voltage and battery power applications.
G
D
TO-251(J)
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
- 20
V
VGS
Gate-Source Voltage
+12
V
[email protected]=25℃
Continuous Drain Current, VGS @ 4.5V
-10
A
[email protected]=100℃
Continuous Drain Current, VGS @ 4.5V
-6.2
A
1
IDM
Pulsed Drain Current
-24
A
[email protected]=25℃
Total Power Dissipation
25
W
Linear Derating Factor
0.01
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Parameter
Maximum Thermal Resistance, Junction-case
3
Value
Units
5.0
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
62.5
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
℃/W
Data and specifications subject to change without notice
1
200902096
AP3310GH/J-HF
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
RDS(ON)
VGS=0V, ID=-250uA
Static Drain-Source On-Resistance
2
Min. Typ. Max. Units
-20
-
-
V
-
-0.1
-
V/℃
VGS=-4.5V, ID=-2.8A
-
-
150
mΩ
VGS=-2.5V, ID=-2.0A
-
-
250
mΩ
-0.5
-
-
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
gfs
Forward Transconductance
VDS=-5V, ID=-2.8A
-
4.4
-
S
IDSS
Drain-Source Leakage Current
VDS=-20V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (T j=125 C) VDS=-16V, VGS=0V
-
-
-250
uA
Gate-Source Leakage
VGS=+12V, VDS=0V
-
-
+100 nA
ID=-2.8A
-
6
-
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-6V
-
1.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-5V
-
0.6
-
nC
VDS=-6V
-
25
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
60
-
ns
td(off)
Turn-off Delay Time
RG=6Ω,VGS=-5V
-
70
-
ns
tf
Fall Time
RD=6Ω
-
60
-
ns
Ciss
Input Capacitance
VGS=0V
-
300
-
pF
Coss
Output Capacitance
VDS=-6V
-
180
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
60
-
pF
Source-Drain Diode
Symbol
IS
ISM
VSD
Parameter
Test Conditions
VD=VG=0V , VS=-1.2V
Continuous Source Current ( Body Diode )
Pulsed Source Current ( Body Diode )
1
2
Forward On Voltage
Tj=25℃, IS=-10A, VGS=0V
Min. Typ. Max. Units
-
-
-10
A
-
-
-24
A
-
-
-1.2
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP3310GH/J-HF
24
20
-4.5V
o
T C =150 o C
-4.0V
18
-ID , Drain Current (A)
-ID , Drain Current (A)
T C =25 C
-3.5V
12
-3.0V
6
-4.5V
-4.0V
15
-3.5V
10
-3.0V
-2.5V
5
-2.5V
V GS = -2.0V
V GS = -2.0V
0
0
0.0
2.5
5.0
7.5
10.0
0
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
4
6
8
Fig 2. Typical Output Characteristics
1.8
800
I D = -2.8A
I D = -2.8A
V GS = -4.5V
Normalized R DS(ON)
T C =25 o C
600
RDS(ON) (mΩ)
2
-V DS , Drain-to-Source Voltage (V)
400
200
1.5
1.2
0.9
0
0.6
0
2
4
6
8
-V GS (V)
Fig 3. On-Resistance v.s. Gate Voltage
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3
AP3310GH/J-HF
10
30
25
20
PD (W)
-ID , Drain Current (A)
8
6
15
4
10
2
5
0
0
25
50
75
100
125
0
150
50
T c , Case Temperature ( o C)
100
150
T c , Case Temperature ( o C)
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
1
Normalized Thermal Response (R thjc)
-ID (A)
100
1ms
10
10ms
T C =25 °C
Single Pulse
0.2
0.1
0.1
0.05
PDM
t
0.02
Duty Factor = t/T
Peak Tj = P DM x Rthjc + TC
Single Pulse
DC
10
-V DS (V)
Fig 7. Maximum Safe Operating Area
T
0.01
100ms
1
1
Duty Factor = 0.5
0.01
100
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 8. Effective Transient Thermal Impedance
4
AP3310GH/J-HF
f=1.0MHz
1000
I D =-2.8A
V DS =-6V
4
Ciss
C (pF)
-VGS , Gate to Source Voltage (V)
5
3
Coss
100
2
Crss
1
10
0
0
2
4
6
1
8
3
5
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
9
11
13
Fig 10. Typical Capacitance Characteristics
10
1.5
T j =25 o C
-VGS(th) (V)
T j =150 o C
-IS(A)
7
-V DS (V)
1
1
0.5
0
0
0.3
0.5
0.7
0.9
1.1
1.3
-V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
1.5
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
5
AP3310GH/J-HF
VDS
90%
RD
VDS
D
TO THE
OSCILLOSCOPE
0.3 x RATED VDS
RG
G
10%
S
VGS
VGS
-5 V
td(on)
Fig 13. Switching Time Circuit
td(off) tf
tr
Fig 14. Switching Time Waveform
VG
VDS
TO THE
OSCILLOSCOPE
D
0.3 x RATED VDS
G
S
QG
-5V
QGS
QGD
VGS
-1~-3mA
I
G
ID
Charge
Fig 15. Gate Charge Circuit
Q
Fig 16. Gate Charge Waveform
6