NPN 2N3019 – 2N3020 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N3019 and 2N3020 are NPN transistors mounted in TO-39 metal case . They are intended for high-current, high-frequency amplifier applications. They feature high gain and low saturation voltages. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current PD Total Power Dissipation @ Tamb = 25° PD Total Power Dissipation @ Tcase= 25° TJ Junction Temperature TStg Storage Temperature range 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 Value Unit 80 V 140 V 7 V 1 A 0.8 Watts 5 200 °C -65 to +200 °C Value Unit 35 °C/W 219 °C/W THERMAL CHARACTERISTICS Symbol Ratings RthJ-a Thermal Resistance, Junction to ambient in free air RthJ-c Thermal Resistance, Junction to case COMSET SEMICONDUCTORS 2N3019 2N3020 2N3019 2N3020 1/4 NPN 2N3019 – 2N3020 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICBO IEBO VCEO VCBO VEBO hFE VCE(SAT) VBE(SAT) Ratings Test Condition(s) VCB =950 V IE =0 Collector Cutoff Current VCB =90 V, IE =0 Tj =150°C VEB =5 V Emitter Cutoff Current IC =0 Collector Emitter Breakdown IC =10 mA Voltage IB =0 Collector Base Breakdown IC =100 µA Voltage IE =0 Emitter Base Breakdown IE =100 µA Voltage IC =0 IC =0.1 mA VCE =10 V IC =10 mA VCE =10 V IC =150 mA VCE =10 V DC Current Gain (*) IC =500 mA VCE =10 V IC =1 A VCE =10 V IC =150 mA VCE =10 V Tamb = -55°C IC =150 mA Collector-Emitter saturation IB =15 mA Voltage (*) IC =500 mA IB =50 mA Base-Emitter saturation IC =150 mA IB =15 mA Voltage (*) 16/10/2012 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3019 2N3020 2N3019 2N3020 2N3019 COMSET SEMICONDUCTORS Min Typ Max Unit - - 10 nA - - 10 µA - - 10 nA 80 - - V 140 - - V 7 - - V 50 30 90 40 100 40 50 30 - 100 120 300 120 100 15 - - 40 - - - - 0.2 - - 0.5 - - 1.1 - V 2/4 NPN 2N3019 – 2N3020 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) fT Transition frequency hfe Small Signal Current Gain NF Noise Figure CCBO Collector-Base capacitance CEBO Emitter-Base capacitance rbb’Cb’c Feedback Time Constant IC =50 mA VCE =10 V f = 20 MHz IC =1 mA VCE =5 V f = 1 kHz IC=-100 µA VCE =10 V f = 1 kHz Rg = 1kΩ IE = 0 VCB=10 V f = 1 MHz IC = 0 VEB=0.5 V f = 1 MHz IC =10 mA VCE =10 V f = 4 MHz Min Typ Max Unit 2N3019 100 - - 2N3020 80 - - 2N3019 80 - 400 2N3020 30 - 200 2N3019 - - 4 dB - - 12 pF - - 60 pF - - 400 ps MHz - 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 (*) Pulse conditions : tp < 300 µs, δ =2% 16/10/2012 COMSET SEMICONDUCTORS 3/4 NPN 2N3019 – 2N3020 MECHANICAL DATA CASE TO-39 DIMENSIONS (mm) min max A 8.50 9.39 B 7.74 8.50 C 6.09 6.60 D 0.40 0.53 E - 0.88 F 2.41 2.66 G 4.82 5.33 H 0.71 0.86 J 0.73 1.02 K 12.70 - L 42° 48° Pin 1 : Emitter Pin 2 : Base Pin 3 : Collector Case : Collector Revised september 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 16/10/2012 [email protected] COMSET SEMICONDUCTORS 4/4