NPN BFW16A HF WIDEBAND TRANSISTORS The BFW16A is NPN multi-emitter transistor in a TO-39 metal envolope, with the collector connected to the case. The transistor has extremely good intermodulation properties and a high power gain.It is a ruggedized version of the BFW16, which it succeds. It is primarily intended for : •Final and driver stages of channel and band aerial amplifiers with high outpout power for bands I , II , III , IV , V (40-860 MHz). •Final stage of the wideband vertical amplifier in high speed oscilloscopes. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VEBO VCERM IC ICM Collector-Emitter Voltage Collector-Base Voltage (open emitter ; peak value) Emitter-Base Voltage Collector-Emitter Voltage Collector Current Collector Peak Current Pt Total Power Dissipation TJ TStg Junction Temperature Storage Temperature VCEO VCBOM Value Unit IB = 0 25 V IE = 0 40 V IC = 0 RBE<=50Ω 2 40 150 300 V V mA mA @ TC = 125° 1.5 W 200 -65 to +200 °C °C Value Unit 250 50 1.2 K/W K/W K/W THERMAL CHARACTERISTICS Symbol RthJa RthJmb RthJmb-h Ratings Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Mounting Base Thermal Resistance, Junction to Mounting Base to heatsink 09/11/2012 COMSET SEMICONDUCTORS 1|3 NPN BFW16A ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) ICB0 Collector Cutoff Current hFE DC Current Gain fT Transition frequency CC Cre Collector capacitance at f=1MHz Feedback capacitance at f=1MHz Noise figure at f= 200 MHz F GP Power gain (not neutralized) 09/11/2012 IE=0, VCB=20 V, TJ=150°C IC=50 m A, VCE=5.0 V IC=150 mA, VCE=5.0 V VCE=15 V, IC=150 mA f=500 MHz IE= Ie = 0, VCB=15 V IC= 10 mA, VCE=15 V Tamb= 25°C IC= 30 mA, VCE=15 V ZS= 75 Ω, Tamb= 25°C IC= 70 mA VCE=18 V Tamb= 25°C Min Typ Max Unit 25 25 - 20 - µA - 1.2 - GHz - - 4 pF - 1.7 - - - 6 200 MHz - 16 - 800 MHz - 6.5 - COMSET SEMICONDUCTORS - 2|3 dB dB NPN BFW16A MECHANICAL DATA CASE TO-39 DIMENSIONS (mm) min max A B C 8.50 9.39 7.74 8.50 6.09 6.60 D 0.40 0.53 E F G H J K L - 0.88 2.41 2.66 4.82 5.33 0.71 0.86 0.73 1.02 12.70 - 42° 48° Pin 1 : Emitter Pin 2 : Base Pin 3 : Collector Case : Collector Revised September 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 09/11/2012 [email protected] COMSET SEMICONDUCTORS 3|3