BUR52 HIGH CURRENT NPN SILICON TRANSISTORS The BUR52 is a silicon multiepitaxial planar NPN transistor in modified jedec TO-3 metal case, Intented for use in switching and linear applications in military and industrial equipment. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO VCBO VEBO Collector-Emitter Voltage (IB = 0) Collector-Base Voltage (IE = 0) Emitter-Base Voltage (IC = 0) IC Collector Current IB PT TJ TS Base Current Power Dissipation IC ICM tp = (10 ms) @ TC = 25° Junction Temperature Storage Temperature Value Unit 250 350 10 V V V 60 80 16 350 200 -55 to +200 A A W °C THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case COMSET SEMICONDUCTORS Value Unit 0.5 °C/W 1/3 BUR52 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit ICEO Collector Cutoff Current VCE = 250 V, (IB = 0) - - 1 mA IEBO Emitter Cutoff Current VBE = 7 V, (IC = 0) - - 0.2 µA - - 0.2 - - 2 ICBO TCASE = 25°C VCB = 350 V, (IE = 0) TCASE = 125°C VC = 350 V, (IE = 0) Collector Cutoff Current mA VCEO(SUS) Collector-Emitter Sustaining Voltage (*) IC = 200 A 250 - - V VEBO Emitter-Base Voltage IC = 10 mA, (IC = 0) 10 - - V Collector-Emitter saturation Voltage (*) IC = 25 A, IB = 2 A - - 1 VCE(SAT) IC = 40 A, IB = 4 A - 0.7 1.5 Base-Emitter saturation Voltage (*) IC = 25 A, IB = 2 A - - 1.8 VBE(SAT) IC = 40 A, IB = 4 A - 1.5 2 hFE DC Current Gain (*) VCE = 4 V, IC = 5 A 20 - 100 VCE = 4 V, IC = 40 A 15 - - Is/b Second Breakdown Collector Current 17.5 - - A fT Transition - Frequency 10 16 MHz ton Turn-on time - 0.3 1 µs ts Storage Time - 1.2 2 ff VCE = 20 V, t = 1 s VCE = 5 V, IC = 1 A f = 1 MHz VCC = 100 V IC = 40 A ; IB1 = 4 A VCC = 100 V IC = 40 A IB1= 4 A, IB2 = -4 A Fall Time Clamped Es/b Collector Current Vclamp = 250 V L = 500 µH V - V - µs - 0.2 0.6 40 - - A (*) Pulse duration = 300 µs, Duty Cycle ∠1.5 % COMSET SEMICONDUCTORS 2/3 BUR52 MECHANICAL DATA CASE TO-3 DIMENSIONS (mm) A B C D F G N P R U V Pin 1 : Pin 2 : Case : min max 11 0.97 1.5 8.32 19 10.70 16.50 25 4 38.50 30 13.10 1.15 1.65 8.92 20 11.1 17.20 26 4.09 39.30 30.30 Base Emitter Collector Revised September 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com [email protected] COMSET SEMICONDUCTORS 3/3