DHG 10 I 1200PM advanced V RRM = 1200 V 10 A I FAV = t rr = 75 ns Sonic-FRD High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number 3 DHG 10 I 1200PM 1 Backside: isolated Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) TO-220FPAC ● Industry standard outline ● Plastic overmolded tab for electrical isolation ● Epoxy meets UL 94V-0 ● RoHS compliant Ratings Symbol Definition VRRM max. repetitive reverse voltage IR reverse current VF Conditions forward voltage I FAV average forward current VF0 rF threshold voltage slope resistance min. TVJ = 25 °C thermal resistance junction to case 1200 V TVJ = 25 °C 15 µA TVJ = 125 °C 1.5 mA I F = 10 A I F = 20 A TVJ = 25 °C 2.69 V 3.56 V I F = 10 A I F = 20 A TVJ = 125 °C 2.38 3.33 V V rectangular, d = 0.5 T C = 30 °C 10 A T VJ = 150 °C 1.60 73.6 V mΩ 4.00 K/W TVJ Ptot total power dissipation I FSM max. forward surge current I RM max. reverse recovery current t rr reverse recovery time CJ junction capacitance EAS non-repetitive avalanche energy I AR repetitive avalanche current VA = 1.5·VR typ.; f = 10 kHz 150 °C = 25 °C -55 31 W t p = 10 ms (50 Hz), sine TVJ = 45 °C 70 A I F = 10 A; TVJ = 25 °C TVJ = 125 °C 8.5 A A VR = 800 V TVJ = 25 °C TVJ = 125 °C 75 ns ns VR = 600 V; f = 1 MHz TVJ = 25 °C tbd pF I AS = tbd A; L = 100 µH TVJ = 25 °C TC -diF /dt = 350 A/µs * Data according to IEC 60747and per diode unless otherwise specified tbd mJ tbd A 0629 © 2006 IXYS all rights reserved Unit VR = 1200 V virtual junction temperature IXYS reserves the right to change limits, conditions and dimensions. max. VR = 1200 V for power loss calculation only R thJC typ. DHG 10 I 1200PM advanced Ratings Symbol Definition Conditions I RMS RMS current per pin* RthCH thermal resistance case to heatsink MD mounting torque FC mounting force with clip T stg storage temperature Weight min. typ. max. Unit 35 A 0.50 K/W 0.4 0.6 Nm 20 60 N -55 150 °C 2 g * Irms is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. Outlines TO-220FPAC © 2006 IXYS all rights reserved * Data according to IEC 60747and per diode unless otherwise specified 0629 IXYS reserves the right to change limits, conditions and dimensions.