CM450DY-24S Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Dual IGBTMOD™ S-Series Module 450 Amperes/1200 Volts A D L (4 PLACES) K K K V G C2E1 G2 E2 C1 E2 B E H N J E1 G1 M (3 PLACES) F G Q P P X Z F Y U Q V P W C LABEL S G2 Tolerance Otherwise Specified Division of Dimension Tolerance 0.5 to 3 ±0.2 over 3 to 6 ±0.3 over 6 to 30 ±0.5 over 30 to 120 ±0.8 over 120 to 400 ±1.2 E2 C2E1 Tr2 E2 Di1 Di2 Tr1 R C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions Inches A 4.33 110.0 3.15 80.0 B C Millimeters 1.14+0.04/-0.02 29.0+1.0/-0.5 Dimensions Inches N 1.18 Millimeters 30.0 P 0.71 18.0 Q 0.28 7.0 D 3.66±0.01 93.0±0.25 R 0.83 21.2 E 2.44±0.01 62.0±0.25 S 0.33 8.5 F 0.98 G 0.24 H 0.59 J 0.81 K 0.55 L 0.26 Dia. M M6 Metric T 0.0157 0.4 U 0.110 2.8 15.0 V 0.16 4.0 20.5 W 0.30 7.5 14.0 X 0.21 5.3 Dia. 6.5 Y 0.47 12.0 Z 0.85 21.5 25.0 6.0 M6 Description: Powerex Dual IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ AC Motor Control £ Motion/Servo Control £UPS £ Welding Power Supplies £ Laser Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM450DY-24S is a 1200V (VCES), 450 Ampere Dual IGBTMOD™ Power Module. 09/11 Rev. 1 Type Current Rating Amperes VCES Volts (x 50) CM 450 24 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM450DY-24S Dual IGBTMOD™ S-Series Module 450 Amperes/1200 Voltstt Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Inverter Part IGBT/FWDi Characteristics SymbolRatingUnits Collector-Emitter Voltage (VGE = 0V) VCES 1200Volts Gate-Emitter Voltage (VCE = 0V) VGES ±20Volts Collector Current (DC, TC = 125°C)*2,*8IC Collector Current (Pulse, Repetitive)*3I 410Amperes CRM 900Amperes Total Power Dissipation (TC = 25°C)*2,*4Ptot 3330Watts Emitter Current (TC = 25°C)*2,*4,*8 IE*1 410Amperes Emitter Current (Pulse, Repetitive)*3 IERM*1 900Amperes Module Characteristics SymbolRatingUnits Maximum Junction Temperature Tj(max)+175 °C Tj(op) -40 to +150 °C Tstg -40 to +125 °C Case Temperature,*2TC -40 to +125 °C 77.4 46.8 20.4 33.6 VISO 2500Volts 0 0 Di1 Tr1 Tr2 Tr2 Tr2 Di1 Tr1 45.6 Di2 Di2 Di1 Tr1 46.6 Di2 66.2 33.3 0 *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *3 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. *4 Junction temperature (Tj) should not increase beyond maximum junction temperature (Tj(max)) rating. *8 This model has 450A size IGBT and FWDi chips. This package limitation is based on package issue. 20.6 Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute) 33.6 Storage Temperature 0 Operating Junction Temperature 21.5 21.6 35.0 48.2 48.4 LABEL SIDE Tr1 / Tr2: IGBT, Di1 / Di2: FWDi Each mark points to the center position of each chip. 2 09/11 Rev. 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM450DY-24S Dual IGBTMOD™ S-Series Module 450 Amperes/1200 Volts Electrical Characteristics, Tj = 25°C unless otherwise specified Inverter Part IGBT/FWDi Characteristics Symbol Test Conditions Min. Typ. Max. Units ICES VCE = VCES, VGE = 0V — — 1 mA Gate-Emitter Leakage Current IGES VGE = VGES, VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 45mA, VCE = 10V 5.4 6 6.6 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 450A, VGE = 15V, Tj = 25°C*5 — 1.80 2.25 Volts (Terminal) IC = 450A, VGE = 15V, Tj = 125°C*5 — 2.05 — Volts 150°C*5 — 2.10 — Volts IC = 450A, VGE = 15V, Tj = 25°C*5 — 1.70 2.15 Volts 125°C*5 — 1.90 — Volts IC = 450A, VGE = 15V, Tj = 150°C*5 — 1.95 — Volts Collector-Emitter Cutoff Current IC = 450A, VGE = 15V, Tj = Collector-Emitter Saturation Voltage VCE(sat) (Chip) Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Gate Charge QG Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Emitter-Collector Voltage IC = 450A, VGE = 15V, Tj = VCE = 10V, VGE = 0V — 45 nF — 9.0 nF — — 0.75 nF VCC = 600V, IC = 450A, VGE = 15V — 1050 — nC — — 800 ns tr VCC = 600V, IC = 450A, VGE = ±15V, — — 200 ns td(off) RG = 0Ω, Inductive Load — — 600 ns — — 300 ns 25°C*5 — 1.85 2.30 Volts IE = 450A, VGE = 0V, Tj = 125°C*5 — 1.85 — Volts td(on) tf *1 VEC (Terminal) IE = 450A, VGE = 0V, Tj = IE = 450A, VGE = 0V, Tj = Emitter-Collector Voltage — — 150°C*5 — 1.85 — Volts VEC*1 IE = 450A, VGE = 0V, Tj = 25°C*5 — 1.70 2.15 Volts (Chip) IE = 450A, VGE = 0V, Tj = 125°C*5 — 1.70 — Volts — 1.70 — Volts IE = 450A, VGE = 0V, Tj = 150°C*5 Reverse Recovery Time trr VCC = 600V, IE = 450A, VGE = ±15V — — 300 ns Reverse Recovery Charge Qrr*1 RG = 0Ω, Inductive Load — 24 — µC Turn-on Switching Energy per Pulse Eon VCC = 600V, IC = IE = 450A, — 54.9 — mJ Turn-off Switching Energy per Pulse Eoff VGE = ±15V, RG = 0Ω, — 48.0 — mJ Reverse Recovery Energy per Pulse Err*1 Tj = 150°C, Inductive Load — 32.4 — mJ RCC' + EE' Main Terminals-Chip, — — 0.7 mΩ — 4.3 — Ω Internal Lead Resistance *1 09/11 Rev. 1 46.8 20.4 33.6 0 0 Di1 Tr1 Di1 Tr1 45.6 Di2 Di2 Di1 Tr1 46.6 Di2 66.2 Tr2 Tr2 Tr2 20.6 33.3 0 *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *5 Pulse width and repetition rate should be such as to cause negligible temperature rise. Per Switch 33.6 rg 0 Internal Gate Resistance 77.4 Per Switch,TC = 25°C*2 21.5 21.6 35.0 48.2 48.4 LABEL SIDE Tr1 / Tr2: IGBT, Di1 / Di2: FWDi Each mark points to the center position of each chip. 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM450DY-24S Dual IGBTMOD™ S-Series Module 450 Amperes/1200 Voltstt Thermal Resistance Characteristics, Tj = 25°C unless otherwise specified Thermal Resistance, Junction to Case*2 Rth(j-c)Q Case*2 Rth(j-c)D Thermal Resistance, Junction to Contact Thermal Resistance, Case to Rth(c-f) Per Inverter IGBT — Per Inverter FWDi Thermal Grease Applied Heatsink*2 (Per 1 — 0.045 K/W — — 0.068 K/W — 0.018 — K/W Module)*6 Mechanical Characteristics Mounting Torque Creepage Distance Mt Main Terminals, M6 Screw 31 35 40 in-lb Ms Mounting to Heatsink, M6 Screw 31 35 40 in-lb Terminal to Terminal — — — mm Terminal to Baseplate — — — mm ds Clearance da Weight m Flatness of Baseplate ec Terminal to Terminal — — — mm Terminal to Baseplate — — — mm — 580 — Grams On Centerline X, Y*7 -100 — ±100 µm Recommended Operating Conditons, Ta = 25°C 600 850 Volts 15.0 16.5 Volts RG Per Switch 0 — 8 Ω *2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *6 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)]. *7 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below. 77.4 — 13.5 46.8 Applied Across C1-E2 Applied Across G1-Es1 / G2-Es2 20.4 External Gate Resistance VCC VGE(on) 33.6 Gate (-Emitter Drive) Voltage 0 (DC) Supply Voltage 0 0 – CONCAVE + CONVEX Di1 Tr1 Y X 33.3 Tr2 Tr2 Tr2 Di1 Tr1 45.6 Di2 Di2 Di1 Tr1 Di2 3 mm 4 66.2 46.6 LABEL SIDE Tr1 / Tr2: IGBT, Di1 / Di2: FWDi Each mark points to the center position of each chip. LABEL SIDE BOTTOM 20.6 – CONCAVE 33.6 0 BOTTOM BOTTOM 21.5 21.6 35.0 48.2 48.4 + CONVEX 09/11 Rev. 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM450DY-24S Dual IGBTMOD™ S-Series Module 450 Amperes/1200 Volts COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (CHIP - TYPICAL) 900 600 11 500 400 10 300 200 9 100 0 2 4 6 8 1.5 1.0 0.5 IC = 900A 6 IC = 450A 4 IC = 180A 2 6 8 10 12 14 16 18 COLLECTOR CURRENT, IC, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (CHIP - TYPICAL) CAPACITANCE VS. VCE (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 102 Tj = 25°C Tj = 125°C Tj = 150°C 102 td(off) 101 Coes 100 Cres 10-1 0 0.5 1.0 1.5 2.0 2.5 10-2 10-1 3.0 100 101 tf td(on) 102 tr VCC = 600V VGE = ±15V RG = 0Ω Tj = 125°C Inductive Load 101 101 102 102 103 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) SWITCHING TIME VS. GATE RESISTANCE (TYPICAL) SWITCHING TIME VS. GATE RESISTANCE (TYPICAL) 103 td(off) 103 td(on) tf 102 SWITCHING TIME, (ns) td(on) tr VCC = 600V VGE = ±15V RG = 0Ω Tj = 150°C Inductive Load 101 101 102 COLLECTOR CURRENT, IC, (AMPERES) 09/11 Rev. 1 103 td(on) td(off) tf tr 102 VCC = 600V VGE = ±15V IC = 450A Tj = 125°C Inductive Load 101 10-1 20 103 Cies VGE = 0V 103 SWITCHING TIME, (ns) 8 0 0 100 200 300 400 500 600 700 800 900 Tj = 25°C COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) CAPACITANCE, Cies, Coes, Cres, (nF) EMITTER CURRENT, IE, (AMPERES) 2.0 0 10 103 101 2.5 SWITCHING TIME, (ns) 0 Tj = 25°C 3.0 10 VGE = 15V Tj = 25°C Tj = 125°C Tj = 150°C 100 101 GATE RESISTANCE, RG, (Ω) 102 SWITCHING TIME, (ns) COLLECTOR CURRENT, IC, (AMPERES) 15 700 12 13.5 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 3.5 VGE = 20V 800 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (CHIP - TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) OUTPUT CHARACTERISTICS (CHIP - TYPICAL) td(off) tf tr 102 VCC = 600V VGE = ±15V IC = 450A Tj = 150°C Inductive Load 101 10-1 100 101 102 GATE RESISTANCE, RG, (Ω) 5 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM450DY-24S Dual IGBTMOD™ S-Series Module 450 Amperes/1200 Voltstt REVERSE RECOVERY CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 102 102 VCC = 600V VGE = ±15V RG = 0Ω Tj = 150°C Inductive Load Irr trr 101 101 103 102 5 0 500 1000 1500 GATE CHARGE, QG, (nC) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 102 101 VCC = 600V VGE = ±15V RG = 0Ω Tj = 125°C Eon Eoff Err 100 101 102 103 103 102 101 VCC = 600V VGE = ±15V RG = 0Ω Tj = 150°C Eon Eoff Err 100 101 102 102 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) 103 100 10-1 VCC = 600V VGE = ±15V IC = 450A Tj = 150°C 101 Eon Eoff Err 100 101 GATE RESISTANCE, RG, (Ω) 103 102 10-2 10-3 10-3 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) 10-2 10-1 100 102 VCC = 600V VGE = ±15V IC = 450A Tj = 125°C 101 100 10-1 Eon Eoff Err 100 101 102 GATE RESISTANCE, RG, (Ω) COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECIVERY ENERGY, Err, (mJ) 10 EMITTER CURRENT, IE, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) 6 15 0 103 VCC = 600V IC = 450A Tj = 25°C EMITTER CURRENT, IE, (AMPERES) SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECIVERY ENERGY, Err, (mJ) SWITCHING ENERGY, Eon, Eoff, (mJ/PULSE) REVERSE RECIVERY ENERGY, Err, (mJ/PULSE) 101 101 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) VCC = 600V VGE = ±15V RG = 0Ω Tj = 125°C Inductive Load Irr trr REVERSE RECOVERY, Irr (A), trr (ns) 102 100 10-1 GATE CHARGE VS. VGE 103 SWITCHING ENERGY, Eon, Eoff, (mJ/PULSE) REVERSE RECIVERY ENERGY, Err, (mJ/PULSE) REVERSE RECOVERY, Irr (A), trr (ns) 103 101 10-1 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.045°K/W (IGBT) Rth(j-c) = 0.068°K/W (FWDi) 10-2 10-5 10-4 10-3 10-3 TIME, (s) 09/11 Rev. 1