CM600DXL-24S Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Dual IGBT NX-Series Module 600 Amperes/1200 Volts B G J D K L K E F AM AT A C AM AU AU AM AV AH AU L AE Y AJ AL 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 X(4 PLACES) 40 M 39 1 AM R Q 38 AK 37 Z 36 T 35 DETAIL "A" S 34 2 U 33 V D E F AA P N C AS AR 3 32 AQ Z W(6 PLACES) 31 30 4 AP AN H 29 28 5 AB AC 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 DETAIL "B" H DETAIL "B" DETAIL "A" AD AW Es1 G1 TH2 (62) (61) (57) C1(1) C1(2) E2(3) Th NTC TH1 Cs1 (56) (52) Es2 G2 Cs2 (47) (46) (42) Tr1 Tr2 Di1 Di2 AC AF AG Tolerance Otherwise Specified (mm) Division of Dimension Tolerance 0.5 to 3 ±0.2 over 3 to 6 ±0.3 over 6 to 30 ±0.5 over 30 to 120 ±0.8 over 120 to 400 ±1.2 The tolerance of size between terminals is assumed to ±0.4 C2E1 (33) C2E1 (32) E2(4) Outline Drawing and Circuit Diagram DimensionsInches Inches Millimeters A 5.98 152.0 Z 0.86 22.0 B 5.39 137.0 AA 1.08 27.53 C 4.79 121.7 AB 0.14 3.5 D 4.61 117.2 AC 0.51 13.0 E Dimensions 110.0±0.5 AD 0.19 3.0 3.72 94.5 AE 0.42 10.74 G 0.6 15.14 AF H 0.26 6.5 AG 0.81 J 0.53 13.5 AH 0.29 7.4 K 0.14 3.6 AJ 0.05 1.2 0.65 F 4.33±0.02 Millimeters 0.67+0.04/-0.02 17.0+1.0/-0.5 20.5 L 0.3 7.75 AK 0.02 M 0.016 4.05 AL 0.04 1.15 N 1.53 39.0 AM 0.15 3.81 P 0.86 22.0 AN 0.5 Q 1.95 49.72 AP 0.12 R 1.62 41.22 AQ 0.088 Dia. 2.25 Dia. S 0.83 21.14 AR 0.102 Dia. 2.6 Dia. T 0.23 6.0 AS 0.16 Dia. 4.3 Dia. U 0.47 12.0 AT 0.41 V 12.5 3.0 0.67 16.9 10.53 AU 0.6 15.24 W M6 Metric M6 AV 0.75 19.05 X 0.22 Dia. 5.5 Dia. AW 0.27 7.0 Y 05/13 Rev. 6 0.75 Description: Powerex IGBT Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ AC Motor Control £ Motion/Servo Control £ Photovoltaic/Fuel Cell Ordering Information: Example: Select the complete module number you desire from the table below -i.e. CM600DXL-24S is a 1200V (VCES), 600 Ampere Dual IGBT Power Module. Type Current Rating Amperes VCES Volts (x 50) CM600 24 19.24 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM600DXL-24S Dual IGBT NX-Series Module 600 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Inverter Part IGBT/FWDi Characteristics SymbolRating Units Collector-Emitter Voltage (VGE = 0V) VCES1200 Volts Gate-Emitter Voltage (VCE = 0V) VGES±20 Volts Collector Current (DC, TC = 119°C)*2,*4IC Collector Current 600Amperes (Pulse)*3I CRM 1200Amperes Total Power Dissipation (TC = 25°C)*2,*4Ptot 4545Watts Emitter Current (TC = 25°C)*2 IE*1 Emitter Current (Pulse)*3 600Amperes IERM*1 1200Amperes Module Characteristics SymbolRating Units Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute) VISO2500Volts Maximum Junction Temperature, Instantaneous Event (Overload) Tj(max)175 °C Maximum Case Temperature*4TC(max)125 °C Operating Junction Temperature, Continuous Operation (Under Switching) Tj(op) -40 to +150 °C Storage Temperature Tstg -40 to +125 °C *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *3 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. *4 Junction temperature (Tj) should not increase beyond maximum junction temperature (Tj(max)) rating. 98.6 81.8 57.6 27.2 0 0 0 20.9 Th 32.6 Tr1 46.0 Di1 Tr1 Tr1 26.4 Di1 Di1 40.0 72.6 Tr2 Tr2 Tr2 72.2 86.0 Di2 Di2 Di2 85.8 93.9 53.2 22.9 LABEL SIDE 0 Tr1 / Tr2: IGBT, Di1 / Di2: FWDi, Th: NTC Thermistor Each mark points to the center position of each chip. 2 05/13 Rev. 6 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM600DXL-24S Dual IGBT NX-Series Module 600 Amperes/1200 Volts Electrical Characteristics, Tj = 25°C unless otherwise specified Inverter Part IGBT/FWDi Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Emitter Cutoff Current ICES VCE = VCES, VGE = 0V — — 1.0 mA Gate-Emitter Leakage Current IGES VGE = VGES, VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 60mA, VCE = 10V 5.4 6.0 6.6 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 600A, VGE = 15V, Tj = 25°C*5 — 1.85 2.30 Volts (Terminal) IC = 600A, VGE = 15V, Tj = 125°C*5 — 2.05 — Volts IC = 600A, VGE = 15V, Tj = 150°C*5 —2.10 — Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 600A, VGE = 15V, Tj = 25°C*5 — 1.70 2.15 Volts (Chip) IC = 600A, VGE = 15V, Tj = 125°C*5 — 1.90 — Volts —1.95 — Volts — — 60 nF — — 12 nF — — 1.0 nF — 1400 — nC — — 800 ns IC = 600A, VGE = 15V, Tj = Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Gate Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Emitter-Collector Voltage Emitter-Collector Voltage QG VCE = 10V, VGE = 0V VCC = 600V, IC = 600A, VGE = 15V td(on) tr VCC = 600V, IC = 600A, VGE = ±15V, — — 200 ns td(off) RG = 0Ω, Inductive Load — — 600 ns — — 300 ns VEC*1 tf IE = 600A, VGE = 0V, Tj = 25°C*5 — 1.85 2.30 Volts (Terminal) IE = 600A, VGE = 0V, Tj = 125°C*5 — 1.85 — Volts IE = 600A, VGE = 0V, Tj = 150°C*5 — 1.85 — Volts VEC IE = 600A, VGE = 0V, Tj = 25°C*5 — 1.70 2.15 Volts (Chip) IE = 600A, VGE = 0V, Tj = 125°C*5 — 1.70 — Volts — 1.70 — Volts — — 300 ns *1 IE = 600A, VGE = 0V, Tj = Reverse Recovery Time 150°C*5 trr*1 150°C*5 VCC = 600V, IE = 600A, VGE = ±15V *1 Reverse Recovery Charge Qrr RG = 0Ω, Inductive Load — 32 — µC Turn-on Switching Energy per Pulse Eon VCC = 600V, IC = IE = 600A, VGE = ±15V — 20.3 — mJ Turn-off Switching Energy per Pulse Eoff RG = 0Ω, Tj = 150°C — 60.1 — mJ Reverse Recovery Energy per Pulse Err*1 Inductive Load — 69.2 — mJ Main Terminals-Chip, — — 0.8 mΩ — 3.3 — Ω Internal Lead Resistance RCC' + EE' Per Switch,TC = 25°C*2 Internal Gate Resistance rg *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *5 Pulse width and repetition rate should be such as to cause negligible temperature rise. Per Switch 98.6 81.8 27.2 0 0 20.9 Th 32.6 Tr1 46.0 Di1 Tr1 Tr1 26.4 Di1 Di1 40.0 72.6 Tr2 Tr2 Tr2 72.2 86.0 Di2 Di2 Di2 85.8 93.9 53.2 22.9 LABEL SIDE 05/13 Rev. 6 57.6 0 0 Tr1 / Tr2: IGBT, Di1 / Di2: FWDi, Th: NTC Thermistor Each mark points to the center position of each chip. 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM600DXL-24S Dual IGBT NX-Series Module 600 Amperes/1200 Volts Electrical Characteristics, Tj = 25°C unless otherwise specified (continued) NTC Thermistor Part Characteristics Symbol Zero Power Resistance R25 Deviation of Resistance ∆R/R B Constant Test Conditions TC = 25°C*2 Min. Typ. Max. Units 4.85 5.00 5.15 kΩ -7.3 — +7.8 % TC = 100°C*2, R100 = 493Ω B(25/50) — 3375 — K P25 TC = 25°C*4 — — 10 mW Thermal Resistance, Junction to Case*2 Rth(j-c)Q Per Inverter IGBT — — 33 K/kW Case*2 Rth(j-c)D Per Inverter FWDi — — 63 K/kW Rth(c-f) Thermal Grease Applied, 7 — K/kW Power Dissipation Approximate by Equation*6 Thermal Resistance Characteristics Thermal Resistance, Junction to Contact Thermal Resistance, Case to Heatsink*2 — Per 1 Module*7 Mechanical Characteristics Mounting Torque Mt Main Terminals, M6 Screw 31 35 40 in-lb Mounting Torque Ms Mounting to Heatsink, M5 Screw 22 27 31 in-lb Creepage Distance ds Terminal to Terminal 13.2 — — mm Terminal to Baseplate 15.3 — — mm Clearance da Weight m Flatness of Baseplate ec Terminal to Terminal 13.2 — — mm Terminal to Baseplate 14.8 — — mm —690 ±0 On Centerline X, Y*8 — — Grams ±100 µm Recommended Operating Conditons, Ta = 25°C DC Supply Voltage VCC Applied Across C1-E2 Terminals Gate-Emitter Drive Voltage VGE(on) Applied Across External Gate Resistance RG 600 850 Volts 13.515.0 — 16.5 Volts 0 6.8 Ω G1-Es1/G2-Es2 Terminals + : CONVEX – : CONCAVE *2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. R25 1 1 *6 B(25/50) = In( )/( – ) R50 T25 T50 R25; Resistance at Absolute Temperature T25 [K]; T25 = 25 [°C] + 273.15 = 298.15 [K] R50; Resistance at Absolute Temperature T50 [K]; T50 = 50 [°C] + 273.15 = 323.15 [K] *7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)]. *8 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below. Y Per Switch 98.6 81.8 — 57.6 27.2 0 0 0 20.9 Th 32.6 Tr1 46.0 Di1 Tr1 Tr1 26.4 Di1 Di1 40.0 72.6 Tr2 Tr2 Tr2 72.2 86.0 Di2 Di2 Di2 85.8 93.9 53.2 22.9 X MOUNTING SIDE LABEL SIDE 0 Tr1 / Tr2: IGBT, Di1 / Di2: FWDi, Th: NTC Thermistor Each mark points to the center position of each chip. MOUNTING SIDE LABEL SIDE – : CONCAVE + : CONVEX 4 05/13 Rev. 6 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM600DXL-24S Dual IGBT NX-Series Module 600 Amperes/1200 Volts COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 1200 800 11 600 400 10 200 9 0 0 2 4 6 8 2.5 2.0 1.5 1.0 0.5 0 200 400 600 800 1000 1200 COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 104 IC = 1200A 6 IC = 600A 4 IC = 240A 2 0 VGE = 15V Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C 8 6 8 10 12 14 16 18 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 05/13 Rev. 6 3.0 0 10 VGE = 15V Tj = 25°C Tj = 125°C Tj = 150°C COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 12 EMITTER CURRENT, IE, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 15 13.5 1000 3.5 Tj = 25°C VGE = 20V 20 103 102 101 0 0.5 1.0 1.5 2.0 2.5 3.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 5 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM600DXL-24S Dual IGBT NX-Series Module 600 Amperes/1200 Volts HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 103 VGE = 0V td(off) Cies 101 Coes 100 100 101 102 tr VCC = 600V VGE = ±15V RG = 0Ω Tj = 125°C Inductive Load 101 101 102 102 103 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) SWITCHING TIME VS. GATE RESISTANCE (TYPICAL) 103 103 SWITCHING TIME, tr, tf, td(off), (ns) td(off) td(on) 102 VCC = 600V VGE = ±15V RG = 0Ω Tj = 150°C Inductive Load 101 101 104 td(off) tf SWITCHING TIME, (ns) tf Cres 10-1 10-1 tr 102 COLLECTOR CURRENT, IC, (AMPERES) 6 td(on) 103 tf tr 102 101 10-1 103 td(on) VCC = 600V VGE = ±15V IC = 600A Tj = 125°C Inductive Load 100 101 SWITCHING TIME, td(on), (ns) 102 SWITCHING TIME, (ns) CAPACITANCE, Cies, Coes, Cres, (nF) 103 102 102 EXTERNAL GATE RESISTANCE, RG, (Ω) 05/13 Rev. 6 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM600DXL-24S Dual IGBT NX-Series Module 600 Amperes/1200 Volts SWITCHING TIME VS. GATE RESISTANCE (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 104 tf tr 102 103 td(on) 101 10-1 VCC = 600V VGE = ±15V IC = 600A Tj = 150°C Inductive Load 100 101 SWITCHING TIME, td(on), (ns) SWITCHING TIME, tr, tf, td(off), (ns) td(off) REVERSE RECOVERY, Irr (A), trr (ns) 103 102 102 VCC = 600V VGE = ±15V RG = 0Ω Tj = 125°C Inductive Load Irr trr 101 101 102 103 EXTERNAL GATE RESISTANCE, RG, (Ω) EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) GATE CHARGE VS. VGE 103 20 102 101 101 VCC = 600V VGE = ±15V RG = 0Ω Tj = 150°C Inductive Load Irr trr 102 EMITTER CURRENT, IE, (AMPERES) 05/13 Rev. 6 103 GATE-EMITTER VOLTAGE, VGE, (VOLTS) REVERSE RECOVERY, Irr (A), trr (ns) 102 IC = 600A VCC = 600V 16 12 8 4 0 0 500 1000 1500 2000 GATE CHARGE, QG, (nC) 7 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM600DXL-24S Dual IGBT NX-Series Module 600 Amperes/1200 Volts HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Eon Eoff Err 102 Eon Eoff Err 102 103 COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 102 102 101 VCC = 600V VGE = ±15V IC/IE = 600A Tj = 125°C 101 100 Eon Eoff Err 100 101 10-1 102 SWITCHING ENERGY, Eon, Eoff, (mJ) COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) GATE RESISTANCE, RG, (Ω) 8 101 100 101 103 103 100 10-1 VCC = 600V VGE = ±15V RG = 0Ω Tj = 150°C 103 102 102 101 VCC = 600V VGE = ±15V IC/IE = 600A Tj = 150°C 101 100 Eon Eoff Err 100 10-1 100 101 REVERSE RECOVERY ENERGY, Err, (mJ) SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECOVERY ENERGY, Err, (mJ) 101 100 101 SWITCHING ENERGY, Eon, Eoff, (mJ) 102 VCC = 600V VGE = ±15V RG = 0Ω Tj = 125°C REVERSE RECOVERY ENERGY, Err, (mJ) SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECOVERY ENERGY, Err, (mJ) 102 10-1 102 GATE RESISTANCE, RG, (Ω) 05/13 Rev. 6 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) CM600DXL-24S Dual IGBT NX-Series Module 600 Amperes/1200 Volts TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) 100 10-1 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 33°K/kW (IGBT) Rth(j-c) = 63°K/kW (FWDi) 10-2 10-3 10-5 10-4 10-3 10-2 10-1 100 101 TIME, (s) 05/13 Rev. 6 9