AO4821 12V Dual P-Channel MOSFET General Description The AO4821 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch. Features VDS ID (at VGS=-4.5V) -12V -9A RDS(ON) (at VGS=-4.5V) < 19mΩ RDS(ON) (at VGS =-2.5V) < 24mΩ RDS(ON) (at VGS =-1.8V) < 30mΩ SOIC-8 D1 1 D2 Top View S2 G2 S1 G1 1 2 3 4 D2 D2 D1 D1 8 7 6 5 Rg Rg G1 G2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current C Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead 1/5 Steady-State Steady-State V A 2 W 1.28 TJ, TSTG Symbol t ≤ 10s ±8 -60 PD TA=70°C Units V -7 IDM TA=25°C Maximum -12 -9 ID TA=70°C S2 RθJA RθJL °C -55 to 150 Typ 48 74 32 Max 62.5 90 40 Units °C/W °C/W °C/W www.freescale.net.cn AO4821 12V Dual P-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -12 IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -0.35 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -60 TJ=55°C -5 VDS=0V, VGS= ±8V ±10 VGS=-4.5V, ID=-9A TJ=125°C Units V -1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max VDS=-12V, VGS=0V IDSS RDS(ON) Typ -0.53 -0.85 µA µA V A 16 19 22 27 mΩ VGS=-2.5V, ID=-8A 19 24 mΩ VGS=-1.8V, ID=-6A 23 30 mΩ Forward Transconductance VDS=-5V, ID=-9A 45 VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current gFS DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr -0.56 -1 V -3 A 1390 1740 2100 pF 230 334 435 pF 120 200 280 pF VGS=0V, VDS=0V, f=1MHz 0.9 1.3 1.7 kΩ 15 19 23 nC VGS=-4.5V, VDS=-6V, ID=-9A 3.6 4.5 5.4 nC 5.3 7.4 nC VGS=0V, VDS=-6V, f=1MHz SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Qgs S 3 VGS=-4.5V, VDS=-6V, RL=0.67Ω, RGEN=3Ω IF=-9A, dI/dt=500A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-9A, dI/dt=500A/µs 240 ns 580 ns 7 µs 4.2 µs 18 22 26 14 17 20 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. 2/5 www.freescale.net.cn AO4821 12V Dual P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 60 -4.5V -2.5V 50 VDS=-5V 50 -3V 40 40 -ID(A) -ID (A) -2V 30 20 30 20 125°C VGS=-1.5V 10 0 0 0 1 2 3 4 5 0 0.5 1.5 2 2.5 3 1.6 30 Normalized On-Resistance VGS=-1.8V 25 RDS(ON) (mΩ ) 1 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 20 VGS=-2.5V 15 VGS=-4.5V 10 ID=-8A, VGS=-2.5V 1.4 ID=-9A, VGS=-4.5V 1.2 ID=-6A, VGS=-1.8V 1 17 5 2 10 0.8 0 10 15 20 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 5 0 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+01 45 ID=-9A 40 1.0E+00 40 35 125°C 25°C 1.0E-01 -IS (A) RDS(ON) (mΩ ) 25°C 10 30 125°C 25 1.0E-02 1.0E-03 20 1.0E-04 15 25°C 10 0 2 4 1.0E-05 6 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/5 8 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AO4821 12V Dual P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 4.5 2800 VDS=-6V ID=-9A 4 2400 Capacitance (pF) 3.5 -VGS (Volts) 3 2.5 2 1.5 Ciss 2000 1600 1200 Coss 800 1 400 0.5 0 Crss 0 0 5 10 15 Qg (nC) Figure 7: Gate-Charge Characteristics 20 0 2 4 6 8 10 -VDS (Volts) Figure 8: Capacitance Characteristics 10000 100.0 10µs RDS(ON) limited TA=25°C 100µ 1000 Power (W) 10.0 -ID (Amps) 12 1ms 1.0 10ms DC 0.1 10s 100 10 TJ(Max)=150°C TA=25°C 0.0 1 0.01 0.1 1 -VDS (Volts) 10 100 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 RθJA=90°C/W 0.1 PD Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/5 www.freescale.net.cn AO4821 12V Dual P-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s RL V ds Vds DUT Vgs 90 % + Vdd VDC - Rg 1 0% Vgs V gs t d (o n ) tr t d (o ff) to n tf t o ff D iode R ecovery T est C ircuit & W aveform s Q rr = - V ds + Idt DUT V gs V ds - Isd V gs Ig 5/5 Isd L + VD C - IF t rr dI/dt I RM V dd V dd V ds www.freescale.net.cn