TYSEMI 2SB1197K

Product specification
2SB1197K
SOT-23
Features
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
-0.5V
IC / IB= -0.5A / -50mA
.
3
0.4
Low VCE(sat).VCE(sat)
1
0.55
PNP silicon transistor
+0.1
1.3-0.1
+0.1
2.4-0.1
IC = -0.8A.
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base Voltage
VCBO
-40
V
Collector-emitter Voltage
VCEO
-32
V
Emitter-base Voltage
VEBO
-5
V
Collector current
IC
-0.8
A
Collector power dissipation
PC
0.2
W
Jumction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Collector-base breakdown voltae
VCBO
IC = -50
Collector-emitter breakdown voltage
VCEO
IC = -1mA
Emitter-base breakdown voltage
VEBO
IE = -50
Collector cutoff current
ICBO
VCB = -20V
-0.5
IEBO
VEB = -4V
-0.5
Emitter cutoff current
Collector-Emitter Saturation Voltage
A
A
Unit
-40
V
-32
V
-5
V
VCE(sat) IC = -0.5A , IB = -50mA
-0.5
DC current transfer ratio
hFE
VCE = -3V , IC = -100mA
120
Output Capacitance
Cob
VCB = -10V , IE = 0A , f = 1MHz
12
Transition frequency
fT
VCE = -5V , IE = 50mA , f = 100MHz
200
A
A
V
390
30
pF
MHz
hFE Classification
Marking
AHQ
AHR
Rank
Q
R
hFE
120
270
http://www.twtysemi.com
180
390
[email protected]
4008-318-123
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