TYSEMI 2SB1261-Z

Product specification
2SB1261-Z
TO-252
6.50
+0.2
5.30-0.2
+0.15
1.50 -0.15
+0.15
-0.15
Features
2.30
+0.8
0.50-0.7
2.3
+0.1
0.60-0.1
0.127
max
3 .8 0
+0.25
2.65 -0.1
+0.1
0.80-0.1
+0.28
1.50 -0.1
+0.2
9.70 -0.2
High hFE.
+0.15
5.55 -0.15
-0.3V.
+0.15
0.50 -0.15
Low VCE(sat): VCE(sat)
Unit: mm
+0.1
-0.1
+0.15
4.60-0.15
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector to base voltage
VCBO
-60
V
Collector to emitter voltage
VCEO
-60
V
Emitter to base voltage
VEBO
-7
V
Collector current
IC
-3
A
Collector current pulse *1
ICP
-5
A
Base current
IB
-0.5
A
Total power dissipation
PT
Junction temperature
Storage temperature range
*1 PW
2 *2
W
10
W
Tj
150
Tstg
-55 to +150
10ms,duty cycle 50%.
*2 When mounted on ceramic substrate of 7.5cm2 X0.7mm
http://www.twtysemi.com
[email protected]
4008-318-123
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Product specification
2SB1261-Z
Electrical Characteristics Ta = 25
Max
Unit
Collector cutoff current
Parameter
Symbol
ICBO
VCB = -60 V, IE = 0
Testconditons
Min
-10
ìA
Emitter cutoff current
IEBO
VEB = -7.0 V, IC = 0
-10
ìA
DC current gain *
hFE
VCE = -2.0 V, IC = -0.6A
100
VCE = -2.0 V, IC = -2A
50
Typ
400
Collector saturation voltage *
VCE(sat) IC = -1.5A, IB = -0.15A
-0.2
-0.3
Base saturation voltage *
VBE(sat) IC = -1.5A, IB = -0.15A
-0.94
-1.2
Gain bandwidth product
fT
Output capacitance
Cob
Turn-on time
ton
Storage time
tstg
Fall time
* Pulsed: PW
V
VCE = -5.0 V, IE = 1.5A
50
MHz
VCB = -10 V, IE = 0 , f = 1.0 MHz
40
pF
IC = -1.0 A,IB1 = -IB2 = -0.1 A, VCC = 10 V, RL=10Ù
tf
350 ìs, duty cycle
V
0.15
0.5
ìs
0.5
2.0
ìs
0.1
0.5
ìs
2%
hFE Classification
Rank
M
L
K
hFE
100 200
160 320
200 400
http://www.twtysemi.com
[email protected]
4008-318-123
2 of 2