TYSEMI 2SB768

SMD Type
Product specification
2SB768
2.3
+0.1
0.60-0.1
3 .8 0
+0.15
5.55 -0.15
+0.1
0.80-0.1
2.30
+0.8
0.50-0.7
0.127
max
+0.25
2.65 -0.1
+0.2
9.70 -0.2
High Voltage:VCBO=-150V
Unit: mm
+0.1
-0.1
+0.28
1.50 -0.1
Features
+0.15
0.50 -0.15
6.50
+0.2
5.30-0.2
+0.15
-0.15
+0.15
1.50 -0.15
TO-252
1 Base
+0.15
4.60-0.15
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-to-Base Voltage
VCBO
-200
V
Collector-to-Emitter Voltage
VCEO
-150
V
Emitter-to-Base Voltage
VEBO
-5
V
Collector Current
IC
-2
A
Collector Current (Pulse) *1
ICP
-3
A
PT
2
W
Total Power Dissipation *2
Ta=25
Junction Temperature
Tj
150
Storage Temperature
Tstg
-55 to 150
*1 PW
10ms,.Duty Cycle 50%
*2 when mounted on ceramic substrate of 7.5cm2 X 0.7mm
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector Cutoff Current
ICBO
VCB=-150V, IE=0
-50
ìA
Emitter Cutoff Current
IEBO
VEB=-4V, IC=0
-50
ìA
DC Current Gain *
hFE
VCE=-10V, IC=-0.4A
Collector-to-Emitter Saturation Voltage *
Gain Badnwidth Product
40
80
200
-1.0
VCE(sat)
IC=-500mA, IB=-50mA
-0.15
fT
VCE=-10V,IE=-0.4mA
10
V
MHz
* Pulsed :pw 350ìs,Duty Cycle 2%
hFE Classification
Marking
M
L
K
hFE
40 to 80
60 to 120
100 to 200
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