TYSEMI 2SC5585

Transistors
IC
SMD Type
Product specification
2SC5585
SOT-523
Unit: mm
+0.1
1.6-0.1
+0.1
1.0-0.1
+0.05
0.2-0.05
1
+0.15
1.6-0.15
Hig current.
+0.05
0.8-0.05
2
+0.01
0.1-0.01
0.55
Features
Low VCE(sat):VCE(sat) 250mV at IC=200mA/IB=10mA
0.35
3
+0.25
0.3-0.05
0.5
+0.1
-0.1
+0.1
0.8-0.1
+0.05
0.75-0.05
1. Base
2. Emitter
3. Collecter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
15
V
Collector-emitter voltage
VCEO
12
V
Emitter-base voltage
VEBO
6
V
Collector current
IC
500
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
Tstg
-55 to +125
Storage temperature range
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
12
V
IE = 10
6
V
Collectoe-emitter brakdown voltage
VCEO
Emitter-base breakdown voltage
VEBO
Collector cut-off current
ICBO
VCB=15 V
Emitter cut-off current
IEBO
VEB= 6 V
DC current gain
hFE
VCE= 2 V, IC = 10mA
VCE(sat)
IC=200mA,IB=10mA
cob
fT
Unit
IC = 1mA
IC = 10
Collector output capacitance
Max
V
VCBO
Transition frequency
Typ
15
Collector-base breakdown voltage
Collector emitter saturation voltage
Min
A
A
270
100
nA
100
nA
680
90
250
mV
VCB=10V,IE=0,f=1MHz
7.5
pF
VCE = 2V, IE =-10mA,f=100MHz
320
MHz
Marking
Marking
BX
http://www.twtysemi.com
[email protected]
4008-318-123
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