Product specification 2SB1027 Features Low frequency amplifier Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO -180 V Collector to emitter voltage VCEO -160 V Emitter to base voltage VEBO -5 V Collector current Collector peak current Collector power dissipation IC -1.5 A iC(peak)*1 -3 A PC*2 1 W Junction temperature Tj 150 Storage temperature Tstg -55 to 150 *1 PW 10 ms, Duty cycle 20% *2 Value on the alumina ceramic board (12.5X 20X 0.7 mm) Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector to base breakdown voltage V(BR)CBO IC = -1 mA, IE = 0 -180 V Collector to emitter breakdown voltage V(BR)CEO IC = -10 mA, RBE = -120 V Emitter to base breakdown voltage V(BR)EBO IE = -1 mA, IC = 0 -5 V Collector cutoff current ICBO DC current transfer ratio hFE Collector to emitter saturation voltage Base to emitter voltage VCB = -160 V, IE = 0 -10 VCE = -5 V, IC = -0.15 A, 60 VCE = -5 V, IC = -0.5 A, 30 ìA 320 VCE(sat) IC = -0.5 A, IB = -50 mA, -1.0 V VBE VCE = -5 V, IC = -0.15 A, -0.9 V hFE Classification Marking EH EJ EK hFE 60 to 120 100 to 200 160 to 320 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1