Transistors IC SMD Type Product specification 2SD968, 2SD968A Features High collector to emitter voltage VCEO. Large collector power dissipation PC. Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Symbol Rating Unit 100 V 2SD968A 120 V 2SD968 100 V 120 V 2SD968 VCBO VCEO 2SD968A Emitter to base voltage VEBO 5 V Peak collector current ICP 1 A Collector current IC 0.5 A PC * 1 W Tj 150 Tstg -55 to 150 Collector power dissipation Junction temperature Storage temperature 2 * Printed circuit board: Copper foil area of 1cm or more, and the board thickness of 1.7mm for the collector portion http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors IC SMD Type Product specification 2SD968, 2SD968A Electrical Characteristics Ta = 25 Parameter Symbol Collector to emitter voltage 2SD968 2SD968A Emitter to base voltage Testconditons Typ Max Unit IC = 100ìA, IB = 0 100 V VCEO IC = 100ìA, IB = 0 120 V VEBO IE = 10ìA, IC = 0 5 V VCE = 10V, IC = 150mA* 90 VCE = 5V, IC = 500mA* 50 hFE Forward current transfer ratio Min VCEO 220 100 Collector to emitter saturation voltage VCE(sat) IC = 500mA, IB = 50mA* 0.2 0.6 V Base to emitter saturation voltage VBE(sat) IC = 500mA, IB = 50mA* 0.85 1.2 V VCB = 10V, IE = -50mA, f = 200MHz 120 VCB = 10V, IE = 0, f = 1MHz 11 Transition frequency fT Collector output capacitance Cob MHz 20 pF * Pulse measurement hFE Classification Marking Symbol 2SD968 WQ WR 2SD968A VQ VR Rank Q R hFE 90 155 130 220 http://www.twtysemi.com [email protected] 4008-318-123 2 of 2