TYSEMI BCW60A

Transistors
IC
SMD Type
Product specification
BCW60A/B/C/D
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Features
1
0.55
+0.1
1.3-0.1
+0.1
2.4-0.1
0.4
3
NPN epitaxial silicon transistor.
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
32
V
Collector-emitter voltage
VCEO
32
V
Emitter-base voltage
VEBO
5
V
IC
100
mA
Collector power dissipation
Pc
350
mW
Storage temperature
Tstg
150
Collector current
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 2
Transistors
IC
SMD Type
Product specification
BCW60A/B/C/D
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Collector-emitter breakdown voltage
BVCEO
IC=2mA, IB=0
32
Emitter-base breakdown voltage
BVEBO
IE=1ìA, IC=0
5
Collector cut-off current
Emitter cutoff current
ICES
VCE=32V, VBE=0
IEBO
IC = 0; VEB = 4 V
BCW60B
Max
Unit
20
nA
20
nA
20
VCE=5V, IC=10ìA
BCW60C
40
BCW60D
100
BCW60A
120
220
180
310
250
460
BCW60D
380
630
BCW60A
60
BCW60B
DC Current Gain
Typ
BCW60C
VCE=5V, IC=2mA
hFE
BCW60B
70
VCE=1V, IC=50mA
BCW60C
90
BCW60D
10
Collector-Emitter Saturation Voltage
VCE(sat)
Base to emitter saturation voltage
VBE(sat)
Base to emitter voltage
VBE(on)
IC = 50 mA; IB = 1.25 mA
0.55
V
IC = 10 mA; IB = 0.25 mA
0.35
V
0.7
1.05
V
IC = 10 mA; IB = 0.25 mA
0.6
0.85
V
IC = 2 mA; VCE = 5 V
0.55
0.75
V
4.5
pF
IC = 50 mA; IB = 1.25 mA
Collector capacitance
Cob
Transition frequency
fT
IC = 10 mA; VCE = 5 V; f = 100 MHz
Noise figure
NF
IC = 0.2 mA; VCE = 5 V; RG = 2 kÙ;
f = 1 kHz
Turn On Time
ton
toff
Turn Off Time
IE = ie = 0; VCB = 10 V; f = 1 MHz
125
MHz
6
dB
IC=10mA, IB1=1mA
150
ns
VBB=3.6V, IB2=1mA
R1=R2=5K , RL=990
800
ns
Marking
TYPE
BCW60A
BCW60B
BCW60C
BCW60D
Marking
AA
AB
AC
AD
http://www.twtysemi.com
[email protected]
4008-318-123
2 of 2