TYSEMI BCW61A

Transistors
IC
SMD Type
Product specification
BCW61A/B/C/D
Features
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
PNP Epitaxial Silicon Transistor
1
0.55
+0.1
1.3-0.1
+0.1
2.4-0.1
0.4
3
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25 unless otherwise noted
Parameter
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
-32
V
Collector-Emitter Voltage
VCEO
-32
V
Emitter-Base Voltage
VEBO
-5
V
IC
-100
mA
PC
350
mW
TSTG
-55 to +150
Collector Current
Collector Power Dissipation
Storage Temperature
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 2
Transistors
IC
SMD Type
Product specification
BCW61A/B/C/D
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector cutoff current
Emitter cutoff current
Testconditons
Min
IE = 0; VCB = -32 V
-20
nA
ICBO
IE = 0; VCB = -32 V; Tamb = 150
-20
ìA
IEBO
IC = 0; VEB = -4 V
-20
nA
hFE
IC = -10ìA; VCE = -5 V
40
BCW61D
100
BCW61B
180
310
250
460
380
630
hFE
BCW61C
IC = -2 mA; VCE = -5 V
BCW61D
BCW61B
DC current gain
Unit
30
BCW61C
DC current gain
Max
ICBO
BCW61B
DC current gain
Typ
80
hFE
BCW61C
IC = -50 mA; VCE = -5 V
100
BCW61D
110
VCE(sat)
Collector-emitter saturation voltage
VBE(sat)
Base to emitter saturation voltage
IC = -10 mA; IB = -0.25 mA
-60
-250
mV
IC = -50 mA; IB = -1.25 mA
-120
-550
mV
IC = -10 mA; IB = -0.25 mA
-600
-850
mV
IC = -50 mA; IB = -1.25 mA
-0.68
-1.05
V
-600
-750
mV
Base to emitter voltage
VBE
IC = -2 mA; VCE = -5 V
Collector capacitance
CC
IE = ie = 0; VCB = -10 V; f = 1 MHz
4.5
pF
Emitter capacitance
Ce
IC = ic = 0; VEB = -0.5 V; f = 1 MHz
11
pF
Transition frequency *
fT
IC = -10 mA; VCE = -5 V; f = 100 MHz
NF
IC = -200 ìA; VCE = -5 V; RS = 2 kÙ;
f = 1 kHz; B = 200 Hz
Noise figure
* Pulse test: tp
300 ìs; d
-650
100
MHz
2
6
dB
0.02.
Marking
TYPE
BCW61A
BCW61B
BCW61C
BCW61D
Marking
BA
BB
BC
BD
http://www.twtysemi.com
[email protected]
4008-318-123
2 of 2