Transistors IC SMD Type NPN General Purpose Transistors BCW60A/B/C/D SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 NPN epitaxial silicon transistor. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 32 V Collector-emitter voltage VCEO 32 V Emitter-base voltage VEBO 5 V IC 100 mA Collector power dissipation Pc 350 mW Storage temperature Tstg 150 Collector current www.kexin.com.cn 1 Transistors IC SMD Type BCW60A/B/C/D Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Collector-emitter breakdown voltage BVCEO IC=2mA, IB=0 32 Emitter-base breakdown voltage BVEBO IE=1ìA, IC=0 5 Collector cut-off current Emitter cutoff current ICES VCE=32V, VBE=0 IEBO IC = 0; VEB = 4 V BCW60B VCE=5V, IC=10ìA Unit 20 nA 20 nA 40 100 BCW60A 120 220 180 310 250 460 BCW60D 380 630 BCW60A 60 BCW60C VCE=5V, IC=2mA hFE BCW60B VCE=1V, IC=50mA 70 BCW60C 90 BCW60D 10 Collector-Emitter Saturation Voltage VCE(sat) Base to emitter saturation voltage VBE(sat) Base to emitter voltage VBE(on) IC = 50 mA; IB = 1.25 mA 0.55 V IC = 10 mA; IB = 0.25 mA 0.35 V 0.7 1.05 V IC = 10 mA; IB = 0.25 mA 0.6 0.85 V IC = 2 mA; VCE = 5 V 0.55 0.75 V 4.5 pF IC = 50 mA; IB = 1.25 mA Collector capacitance Cob Transition frequency fT IC = 10 mA; VCE = 5 V; f = 100 MHz Noise figure NF IC = 0.2 mA; VCE = 5 V; RG = 2 kÙ; f = 1 kHz Turn On Time ton toff Turn Off Time IE = ie = 0; VCB = 10 V; f = 1 MHz 125 MHz 6 dB IC=10mA, IB1=1mA 150 ns VBB=3.6V, IB2=1mA R1=R2=5K , RL=990 800 ns Marking TYPE BCW60A BCW60B BCW60C BCW60D Marking AA AB AC AD www.kexin.com.cn Max BCW60D BCW60B DC Current Gain Typ 20 BCW60C 2 Min