Transistors IC SMD Type Product specification BCW67,BCW68 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 High current gain. 0.55 For general AF applications. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Low collector-emitter saturation voltage. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol BCW67 BCW68 Unit Collector-base voltage VCBO -45 -60 V Collector-emitter voltage VCEO -32 -45 V Emitter-base voltage VEBO -5 -5 V Collector current Peak collector current Base current Peak base current IC -800 mA ICM -1000 mA IB -100 mA IBM -200 mA mW Ptot 330 Junction temperature Tj 150 Storage temperature Tstg -65 to +150 Junction - soldering point RthJS Total power dissipation,TS = 79 http://www.twtysemi.com 215 [email protected] K/W 4008-318-123 1 of 2 Transistors IC SMD Type Product specification BCW67,BCW68 Electrical Characteristics Ta = 25 Parameter Symbol Collector-emitter breakdown voltage BCW67 Testconditons Min BCW67 BCW67 -5 -20 VCB = -45 V, IE = 0 -20 VCB = -32 V, IE = 0 , TA = 150 -20 VCB = -45 V, IE = 0 , TA = 150 -20 IEBO VEB = -4 V, IC = 0 -20 hFE IC = 100 ìA, VCE = 10 V ICBO ICBO A/F DC current gain * hFE-group B/G DC current gain * 75 hFE IC = 10 mA, VCE = 1 V 120 180 A/F 100 160 250 160 250 400 250 350 630 hFE IC = -100 mA, VCE = -1 V C/H Collector-emitter saturation voltage * Base-emitter saturation voltage VCE(sat) * VBE(sat) Transition frequency fT IC = -100 mA, IB = -10 mA -0.3 IC = -500 mA, IB = -50 mA -0.7 IC = -100 mA, IB = -10 mA -1.25 IC = -500 mA, IB = -50 mA -2 IC = -50 mA, VCE = -5 V, f = 20 MHz 200 Collector-base capacitance Ccb VCB = -10 V, f = 1 MHz 6 Emitter-base capacitance Ceb VEB = -0.5 V, f = 1 MHz 60 * Pulse test: t nA 50 C/H hFE-group B/G ìA 80 A/F hFE-group B/G nA 35 C/H DC current gain * V VCB = -32 V, IE = 0 BCW68 Emitter cutoff current V -60 BCW68 Collector cutoff current V -45 V(BR)CBO IC = -10 ìA, IE = 0 V(BR)EBO IE = -10ìA, IC = 0 BCW67 Unit -45 BCW68 Emitter-base breakdown voltage Max -32 V(BR)CEO IC = -10 mA, IB = 0 BCW68 Collector-base breakdown voltage Typ V MHz pF 300ìs, D = 2%. hFE Classification BCW67 TYPE Rank A B C Marking DAs DBs DCs BCW68 TYPE Rank F G H Marking DFs DGs DHs http://www.twtysemi.com [email protected] 4008-318-123 2 of 2