SMD Type SMD Type Product specification BSS79,BSS81 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Low collector-emitter saturation voltage. 1 0.55 High DC current gain: 0.1mA to 500 mA. +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol BSS79 BSS81 Unit Collector-emitter voltage Parameter VCEO 40 35 V Collector-base voltage VCBO Emitter-base voltage 75 V VEBO 6 V Collector current IC 800 mA Peak collector current ICM 1 A mA IB 100 Peak base current IBM 200 mA Total power dissipation,TS = 77 Ptot 330 mW Junction temperature Tj 150 Storage temperature Tstg -65 to +150 Junction - soldering point RthJS Base current http://www.twtysemi.com 220 [email protected] K/W 4008-318-123 1 of 2 SMD Type SMD Type Transistors IC Product specification BSS79,BSS81 Electrical Characteristics Ta = 25 Parameter Symbol Collector-emitter breakdown voltage BSS79 Testconditons Min Typ Max 40 V(BR)CEO IC = 10 mA, IB = 0 BSS81 Unit V 35 Collector-base breakdown voltage V(BR)CBO IC = 10 ìA, IE = 0 75 V Emitter-base breakdown voltage V(BR)EBO IE = 10 ìA, IC = 0 6 V Collector cutoff current ICBO Emitter cutoff current IEBO BSS79/81B VCB = 60 V, IE = 0 10 nA VCB = 60 V, IE = 0 , TA = 150 10 ìA VEB = 3 V, IC = 0 10 nA 20 IC = 100ìA, VCE = 10 V BSS79/81C 35 BSS79/81B 25 IC = 1 mA, VCE = 10 V BSS79/81C BSS79/81B DC current gain * BSS79/81C 50 hFE BSS79/81B 35 IC = 10 mA, VCE = 10 V 75 40 120 BSS79/81C 100 300 BSS79/81B 25 IC = 150 mA, VCE = 10 V IC = 500 mA, VCE = 10 V BSS79/82C Collector-emitter saturation voltage * Base-emitter saturation voltage 40 VCE(sat) * VBE(sat) IC = 150 mA, IB = 15 mA 0.3 IC = 500 mA, IB = 50 mA 1.3 IC = 150 mA, IB = 15 mA 1.2 IC = 500 mA, IB = 50 mA Transition frequency fT Collector-base capacitance Ccb V 2.0 IC = 20 mA, VCE = 20 V, f = 100 MHz VCB = 10 V, f = 1 MHz 250 MHz 6 pF Delay time td VCC = 30 V, IC = 150 mA, IB1 = 15 mA,VBE(off) = 0.5 V 10 ns Rise time tr VCC = 30 V, IC = 150 mA, IB1 = 15 mA,VBE(off) = 0.5 V 25 ns tstg VCC = 30 V, IC = 150 mA, IB1=IB2 = 15mA 250 ns tf VCC = 30 V, IC = 150 mA, IB1=IB2 = 15mA 60 ns Storage time Fall time * Pulse test: t 300ìs, D = 2%. hFE Classification BSS79 TYPE Rank B C Marking CEs CFs BSS81 TYPE Rank B C Marking CDs CGs http://www.twtysemi.com [email protected] 4008-318-123 2 of 2