TYSEMI BCX69

Transistors
SMD Type
Product specification
BCX69
SOT-89
Unit: mm
+0.1
4.50-0.1
+0.1
1.50-0.1
+0.1
1.80-0.1
+0.1
2.50-0.1
For general AF applications.
+0.1
4.00-0.1
Features
High collector current.
+0.1
3.00-0.1
+0.1
0.40-0.1
+0.1
2.60-0.1
Low collector-emitter saturation voltage.
+0.1
0.44-0.1
+0.1
0.80-0.1
+0.1
0.53-0.1
+0.1
0.48-0.1
High current gain.
1. Base
2. Collector
3. Emiitter
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
20
V
Collector-emitter voltage
VCEO
25
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
1
A
Peak collector current
ICM
2
A
IB
100
mA
Peak base current
Base current
IBM
200
mA
Total power dissipation
Ptot
1
W
Junction temperature
Tj
150
Storage temperature
Tstg
-65 to +150
Junction - soldering point
RthJS
http://www.twtysemi.com
[email protected]
20
K/W
4008-318-123
1 of 2
Transistors
SMD Type
Product specification
BCX69
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-emitter breakdown voltage
V(BR)CEO
IC = 30 mA, IB = 0
20
V
Collector-base breakdown voltage
V(BR)CBO
IC = 10 ìA, IB = 0
25
V
Emitter-base breakdown voltage
V(BR)EBO
IE = 1 ìA, IC = 0
5
V
Collector cutoff current
ICBO
DC current gain *
hFE
VCB = 25 V, IE = 0
VCB = 25 V, IE = 0 , TA = 150
IC = 5 mA, VCE = 10 V
85
BCX69-10
100
ìA
375
85
100
160
BCX69-16
100
160
250
BCX69-25
160
250
375
DC current gain *
hFE
hFE
IC = 500 mA, VCE = 1 V
IC = 1A, VCE = 1V
Collector-emitter saturation voltage *
VCE(sat)
IC = 1 A, IB = 100 mA
Base-emitter voltage
VBE(ON)
IC = 5 mA, VCE = 10 V
*
60
0.5
fT
V
0.6
IC = 1 A, VCE = 1 V
Transition frequency
* Pulse test: t
nA
50
BCX69
DC current gain *
100
1
IC = 100 mA, VCE = 5 V, f = 20 MHz
100
MHz
300ìs, D = 2%.
hFE Classification
TYPE
BCX69
BCX69-10
BCX69-16
BCX69-25
Marking
CE
CF
CG
CH
http://www.twtysemi.com
[email protected]
4008-318-123
2 of 2