IC SMD Type Type SMD Product specification BSS87 SOT-89 ■ Features Unit: mm +0.1 4.50-0.1 ● High-speed switching +0.1 1.50-0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 ● Low RDS(on) 3 2 +0.1 0.53-0.1 +0.1 0.44-0.1 +0.1 2.60-0.1 +0.1 0.48-0.1 +0.1 0.80-0.1 1 +0.1 4.00-0.1 ● No secondary breakdown. 1 Gate +0.1 0.40-0.1 +0.1 3.00-0.1 1. Source Base 1. 2 Drain Collector 2.2. Drain 3 Source Emiitter 3.3. Gate ■ Absolute Maximum Ratings Ta = 25℃ Parameter Rating Unit Drain-to-source voltage VDSS 200 V Gate-to-source voltage VGS ±20 V 280 mA 1.1 A 1 W RθJA 125 ℃/W TJ, Tstg -55 to 150 ℃ Drain Current Symbol – Continuous 1 ID – Pulsed PD Total power dissipation @ TA = 25℃ Thermal resistance,junction-to-ambient Operating and storage temperature range ■ Electrical Characteristics Ta = 25℃ Parameter Drain-to-source breakdown voltage Zero Gate Voltage Drain Current Symbol Test conditons Min V(BR)DSS VGS = 0 V, ID = 250 μA 200 IDSS VDS = 200 V, VGS = 0 IGSS VGS = ± 20 V, VDS = 0 Gate-source threshold voltage VGS(th) VDS = VGS, ID = 1.0 mA Static drain-to-source on-rResistance RDS(on) VGS = 10V, ID = 400mA Gate-source leakage current Input capacitance Ciss Output capacitance Coss 0.8 Typ Max Unit 60 μA ±0.1 μA 2.8 V 6 Ω V 60 VDS = 25 V, VGS = 0, f = 1 MHz 25 Transfer capacitance Crss 10 Turn-on delay time td(on) 10 Rise time Turn-off delay time Fall time http://www.twtysemi.com tr td(off) VDD = 120 V,VGS=10V, ID = 280m A, RGEN = 6Ω tf [email protected] 12 25 pF ns 40 4008-318-123 1 of 1