US3400 N-Ch 30V Fast Switching MOSFETs General Description Product Summery The US3400 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The US3400 meet the RoHS and Green Product requirement with full function reliability approved. BVDSS RDS(ON) 30V 52mΩ ID 5.8A Applications z High Frequency Point-of-Load Synchronous s Small power switching for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch Features z Advanced high cell density Trench technology SOT23 Pin Configuration z Super Low Gate Charge D z Excellent Cdv/dt effect decline z Green Device Available G D S G S Absolute Maximum Ratings Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage Continuous Drain TA=25°C A Current TA=70°C Pulsed Drain Current B VGS Power Dissipation Units V ±12 V 5.8 30 1.4 PD TA=70°C Junction and Storage Temperature Range A 4.9 ID IDM TA=25°C A Maximum 30 W 1 TJ, TSTG °C -55 to 150 Thermal Data Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient C Maximum Junction-to-Lead Symbol A A t 10s Steady-State Steady-State R JA R JL Typ 65 85 43 1 Max 90 125 60 Units °C/W °C/W °C/W US3400 N-Ch 30V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Min Conditions ID=250 A, VGS=0V 1 TJ=55°C 5 Gate-Body leakage current VDS=0V, VGS=±12V Gate Threshold Voltage VDS=VGS ID=250 A 0.6 ID(ON) On state drain current VGS=4.5V, VDS=5V 30 100 VGS=10V, ID=5.8A VGS=4.5V, ID=5A 27.3 33 m VGS=2.5V, ID=4A 43.3 52 m VDS=5V, ID=5A DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time V A 39 IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Crss nA 28 Forward Transconductance Output Capacitance 1.1 32 gFS Coss --- A 22.8 TJ=125°C VSD IS Units V VDS=24V, VGS=0V VGS(th) Static Drain-Source On-Resistance Max 30 IGSS RDS(ON) Typ 10 15 0.71 823 S 1 V 2.5 A 1030 pF VGS=0V, VDS=15V, f=1MHz 99 VGS=0V, VDS=0V, f=1MHz 1.2 3.6 9.7 12 pF 77 VGS=4.5V, VDS=15V, ID=5.8A VGS=10V, VDS=15V, RL=2.7 , RGEN=3 pF nC 1.6 nC 3.1 nC 3.3 5 ns 4.8 7 ns 26.3 40 ns 4.1 6 ns ns nC trr Body Diode Reverse Recovery Time IF=5A, dI/dt=100A/ s 16 20 Qrr Body Diode Reverse Recovery Charge IF=5A, dI/dt=100A/ s 8.9 12 A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. 2 m US3400 N-Ch 30V Fast Switching MOSFETs Typical Characteristics 20 25 10V 3V VDS=5V 16 20 4.5V 2.5V 12 ID(A) ID (A) 15 8 10 125°C VGS=2V 5 0 0 0 1 2 3 4 VDS (Volts) Fig 1: On-Region Characteristics 5 0 60 Normalized On-Resistance RDS(ON) (m ) 0.5 1 1.5 2 2.5 VGS(Volts) Figure 2: Transfer Characteristics 3 1.8 50 VGS=2.5V 40 30 VGS=4.5V 20 VGS=10V 10 1.6 VGS=4.5V 1.4 VGS=10V 1.2 VGS=2.5V 1 0.8 0 5 10 15 0 20 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 70 1.0E+01 60 1.0E+00 ID=5A 1.0E-01 50 125°C IS (A) RDS(ON) (m ) 25°C 4 40 30 125°C 1.0E-02 1.0E-03 25°C 1.0E-04 25°C 20 1.0E-05 1.0E-06 10 0 2 4 6 8 0.0 10 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3 1.2 US3400 N-Ch 30V Fast Switching MOSFETs Typical Characteristics 1400 5 VDS=15V ID=5A 1200 1000 Capacitance (pF) VGS (Volts) 4 3 2 Ciss 800 600 400 Coss 1 Crss 200 0 0 2 4 6 8 10 0 12 0 Qg (nC) Figure 7: Gate-Charge Characteristics 20 25 30 TJ(Max)=150°C TA=25°C 30 Power (W) 100 s 1ms 10ms 1.0 1s 20 10 10s DC 0 0.001 0.1 0.1 1 10 100 JA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.Z R JA=90°C/W JA.R JA 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Z ID (Amps) 15 40 TJ(Max)=150°C TA=25°C 0.1s 10 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 RDS(ON) 10.0 limited 5 0.01 0.00001 T Single Pulse 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4 100 1000