RoHS 2N7002T 2N7002T MOSFET D T ,. L SOT-523 ( N-Channel ) FEATURES Power dissipation 1. GATE PD: 0.15 W (Tamb=25℃) 2. SOURCE 3. DRAIN Collector current ID: 115 mA Collector-base voltage 60 V VDS: Operating and storage junction temperature range IC TJ,Tstg: -55℃ to +150℃ Marking: 72 ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol Drain-Source Breakdown Voltage * Gate-Threshold Voltage* Gate-body Leakage* On-state Drain Current * E Forward Tran conductance Input Capacitance J E Output Capacitance R T Reverse Transfer Capacitance MIN TYP MAX Vth(GS) VDS=VGS, ID=250µA 1 lGSS VDS=0V, VGS=±20V ±10 VDS=60V, VGS=0V 1 IDSS RDS(0n) * N conditions specified) 60 ID(ON) Drain-Source On-Resistance * O Test otherwise VGS=0V,ID=10µA V(BR)DSS C E L Zero Gate Voltage Drain Current * unless C O VGS=10V, VDS=7.5V 500 1000 mA 3.2 7.5 VGS=10V, ID=500mA 4.4 13.5 CiSS VDS=25V, VGS=0V COSS nA 500 VGS=5V, ID=50mA VDS=10V, ID=200mA V µA VDS=60V,VGS=0V,Tj=125℃ gFS CrSS 2 UNIT 80 Ω ms 22 50 11 25 2 5 f=1MHz pF SWITCHING W Turn-on Time TD(ON) Turn-off Time TD(OFF) VDD=30V,RL=150 7 20 11 20 ID=200mA,VGEN=10V RGEN=25Ω ns * Pulse test. WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] 2N7002T R T J E O IC C D T ,. L O N C E L E W WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]