WINNERJOIN 2SD866

RoHS
2SD886
2SD886
TO—126
FEATURES
Power dissipation
1. EMITTER
PCM:
1
W (Tamb=25℃)
2. COLLECTOR
Collector current
ICM:
3
A
Collector-base voltage
V(BR)CBO:
50
V
Operating and storage junction temperature range
3. BASE
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
IC
V(BR)CBO
Collector-emitter breakdown voltage
V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
N
unless otherwise specified)
Symbol
Collector-base breakdown voltage
C
O
123
TJ, Tstg: -55℃ to +150℃
O
Test
R
T
conditions
MIN
TYP
MAX
UNIT
Ic=100µA, IE=0
50
V
Ic=5mA, IB=0
50
V
IE=100µA, IC=0
5
V
ICBO
C
E
L
VCB=50V, IE=0
1
µA
IEBO
VEB=3V, IC=0
1
µA
hFE(1)
VCE=2V, IC=20mA
100
hFE(2)
VCE=2V, IC=1A
100
VCE(sat)
IC=2A, IB=200mA
0.5
V
VBE(sat)
IC=2A, IB=200mA
2
V
fT
VCE=5V, IC=100mA
80
MHz
Cob
VCB=10V, IE=0, f=1MHz
45
pF
Collector cut-off current
Emitter cut-off current
DC current gain
E
Collector-emitter saturation voltage
J
E
D
T
,. L
TRANSISTOR (NPN)
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
400
W
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:[email protected]
2SD886
R
T
J
E
O
IC
C
D
T
,. L
O
N
C
E
L
E
W
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:[email protected]