RoHS BCW68G PNP EPITAXIAL SILICON TRANSISTOR D T ,. L SURFACE MOUNT SMALL SIGNAL TRANSISTORS ABSOLUTE MAXIMUM RATINGS at Ta=25 1. Rating Unit Collector-Emitter Voltage Vceo -45 V Collector-Base Voltage Vcbo -60 V Collector Current Ic -800 mA Collector Dissipation Ta=25 * PD 225 mW Junction Temperature Tj 150 Storage Temperature Tstg -65-150 ELECTRICAL CHARACTERISTICS at Ta=25 Characteristic Symbol R T DC Current Gain Hfe Collector-Emitter Saturation Voltage Vce(sat) Gain Bandwidth Product fT O Min 120 2.4 1.3 IC N Max 400 -1.5 100 C E L * Total Device Dissipation : FR=1X0.75X0.062in Board,Derate 25 . # Pulse Test: Pulse Width J E Unit C 1.BASE 2.EMITTER 3.COLLECTOR O 0.4 Symbol 2.9 1.9 0.95 0.95 Characteristic U nit:m m Test Conditions Vce= -1.0V Ic= -10mA V MHz Ic= -300mA Ib= -30mA Vce= -5V Ic=-10mA f=50MHz 300uS,Duty cycle 2% E W WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]