ETC XP04316

Composite Transistors
XP04316 (XP4316)
Silicon NPN epitaxial planer transistor (Tr1)
Silicon PNP epitaxial planer transistor (Tr2)
Unit: mm
For switching/digital circuits
1
6
2
5
3
4
UNR1216(UN1216) + UNR1116(UN1116)
■ Absolute Maximum Ratings
Parameter
(Ta=25˚C)
Ratings
Unit
Collector to base voltage
VCBO
50
V
Collector to emitter voltage
VCEO
50
V
Collector current
IC
100
mA
Collector to base voltage
VCBO
–50
V
Collector to emitter voltage
VCEO
–50
V
Collector current
IC
–100
mA
1
Total power dissipation
PT
150
mW
2
Overall Junction temperature
Tj
150
˚C
Tstg
–55 to +150
˚C
Tr2
Storage temperature
0.2±0.1
1 : Emitter (Tr1)
4 : Emitter (Tr2)
2 : Base (Tr1)
5 : Base (Tr2)
3 : Collector (Tr2) 6 : Collector (Tr1)
EIAJ : SC–88
S–Mini Type Package (6–pin)
Symbol
Tr1
+0.05
0 to 0.1
●
0.12 –0.02
■ Basic Part Number of Element
0.7±0.1
0.9±0.1
0.2
●
Two elements incorporated into one package.
(Transistors with built-in resistor)
Reduction of the mounting area and assembly cost by one half.
0.425
0.65
●
2.0±0.1
■ Features
1.25±0.1
0.65
0.425
0.2±0.05
2.1±0.1
Marking Symbol: 7U
Internal Connection
3
Tr1
6
5
Tr2
4
Note.) The Part number in the Parenthesis shows conventional part number.
1
Composite Transistors
■ Electrical Characteristics
●
(Ta=25˚C)
Tr1
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector to base voltage
VCBO
IC = 10µA, IE = 0
50
V
Collector to emitter voltage
VCEO
IC = 2mA, IB = 0
50
V
ICBO
VCB = 50V, IE = 0
0.1
µA
ICEO
VCE = 50V, IB = 0
0.5
µA
Emitter cutoff current
IEBO
VEB = 6V, IC = 0
0.01
mA
Forward current transfer ratio
hFE
VCE = 10V, IC = 5mA
Collector cutoff current
Collector to emitter saturation voltage
VCE(sat)
IC = 10mA, IB = 0.3mA
Output voltage high level
VOH
VCC = 5V, VB = 0.5V, RL = 1kΩ
Output voltage low level
VOL
VCC = 5V, VB = 2.5V, RL = 1kΩ
Transition frequency
fT
VCB = 10V, IE = –2mA, f = 200MHz
Input resistance
R1
●
160
460
0.25
4.9
V
V
0.2
150
V
MHz
–30%
4.7
+30%
kΩ
min
typ
max
Unit
Tr2
Parameter
Collector to base voltage
Collector to emitter voltage
Symbol
Conditions
VCBO
IC = –10µA, IE = 0
–50
–50
V
VCEO
IC = –2mA, IB = 0
ICBO
VCB = –50V, IE = 0
ICEO
VCE = –50V, IB = 0
– 0.5
µA
IEBO
VEB = –6V, IC = 0
– 0.01
mA
Forward current transfer ratio
hFE
VCE = –10V, IC = –5mA
Collector to emitter saturation voltage
VCE(sat)
IC = –10mA, IB = – 0.3mA
Output voltage high level
VOH
VCC = –5V, VB = – 0.5V, RL = 1kΩ
Output voltage low level
VOL
VCC = –5V, VB = –2.5V, RL = 1kΩ
Transition frequency
fT
VCB = –10V, IE = 1mA, f = 200MHz
Input resistance
R1
Collector cutoff current
Emitter cutoff current
2
XP04316
V
– 0.1
160
460
– 0.25
–4.9
V
V
– 0.2
80
–30%
µA
4.7
V
MHz
+30%
kΩ
Composite Transistors
XP04316
Common characteristics chart
PT — Ta
Total power dissipation PT (mW)
250
200
150
100
50
0
0
20
40
60
80 100 120 140 160
Ambient temperature Ta (˚C)
Characteristics charts of Tr1
IC — VCE
VCE(sat) — IC
100
Collector current IC (mA)
IB=1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
120
100
0.5mA
0.4mA
80
0.3mA
60
0.2mA
40
20
0.1mA
0
2
4
6
8
10
12
IC/IB=10
30
10
3
1
0.3
Ta=75˚C
25˚C
0.1
0.03
0.01
0.1
0
25˚C
250
–25˚C
200
150
100
50
0
0.3
1
3
10
30
100
1
3
4
3
2
30
100
300
1000
VIN — IO
100
VO=5V
Ta=25˚C
3000
30
1000
10
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
10
Collector current IC (mA)
IO — VIN
10000
Output current IO (µA)
Collector output capacitance Cob (pF)
Ta=75˚C
300
–25˚C
Cob — VCB
5
VCE=10V
350
Collector current IC (mA)
Collector to emitter voltage VCE (V)
6
hFE — IC
400
Forward current transfer ratio hFE
Ta=25˚C
140
Collector to emitter saturation voltage VCE(sat) (V)
160
300
100
30
10
VO=0.2V
Ta=25˚C
3
1
0.3
0.1
1
0.03
3
0
0.1
0.3
1
3
10
Collector to base voltage
30
100
VCB (V)
1
0.4
0.6
0.8
1.0
1.2
Input voltage VIN (V)
1.4
0.01
0.1
0.3
1
3
10
30
100
Output current IO (mA)
3
Composite Transistors
XP04316
Characteristics charts of Tr2
IC — VCE
VCE(sat) — IC
IB=–1.0mA
Collector current IC (mA)
–140
Ta=25˚C
–0.9mA
–0.8mA
–120
–0.7mA
–0.6mA
–100
–0.5mA
–80
–0.4mA
–60
–0.3mA
–40
–0.2mA
–20
–0.1mA
0
0
–2
–4
–6
–8
–10
–12
Collector to emitter saturation voltage VCE(sat) (V)
–100
IC/IB=10
–30
–10
–3
–1
–0.3
Ta=75˚C
25˚C
–0.1
–0.03
–25˚C
–0.01
–0.1 –0.3
Collector to emitter voltage VCE (V)
–10
–10000
–30
Ta=75˚C
200
25˚C
–25˚C
100
0
–1
–100
–3
3
2
–10
–30
–100 –300 –1000
Collector current IC (mA)
VIN — IO
–100
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Input voltage VIN (V)
Output current IO (µA)
Collector output capacitance Cob (pF)
4
–300
–100
–30
–10
VO=–0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
1
–3
0
–0.1 –0.3
–1
–3
–10
–30
–100
Collector to base voltage VCB (V)
4
–3
300
IO — VIN
f=1MHz
IE=0
Ta=25˚C
5
–1
VCE=–10V
Collector current IC (mA)
Cob — VCB
6
hFE — IC
400
Forward current transfer ratio hFE
–160
–1
–0.4
–0.03
–0.6
–0.8
–1.0
–1.2
Input voltage VIN (V)
–1.4
–0.01
–0.1 –0.3
–1
–3
–10
–30
Output current IO (mA)
–100
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2001 MAR